A novel MOSFET interface circuit with a PMOS FET to charge the unknown capacitor and an NMOS FET to discharge it during each measurement cycle is presented. This method, which expands the range of linear operation, is demonstrated in simulation and experimentally validated using a fringing field ...
Further, a current sense circuit is composed of the n-channel MOSFET 3 and 5, the p-channel MOSFET 4, and the buffer 6. An element 102 is a driving element for a clock phi2 having the same composition as that of the element 101. As an initial state, clock input logic is made ...
Variable delay circuit and method, and delay locked loop, memory device and computer system using same A gate driver circuit for switching a MOSFET on and off while reducing the turn off delay of the MOSFET without effecting the turn off slew rate thereof includes a low impedance circuit path...
which depends on the turn-on delay for the gate resistance, the time period for slow-current rise,propagation delayof current buffer, and the time required to turn-off the auxiliary MOSFET. The active GDPCBis shown inFig. 7.17with different circuits marked on the PCB. For delay circuit, op...
专利名称：DELAY CIRCUIT, MULTI-STAGE DELAY CIRCUIT, TIME DIGITAL CONVERTER USING THEM, SEMICONDUCTOR TEST DEVICE,RING OSCILLATOR, AND DELAY LOCK LOOP CIRCUIT 发明人：YAMAMOTO, Kazuhiro,OKAYASU, Toshiyuki 申请号：JP2008003559 申请日：20081202 公开号：WO09/072268P1 公开日：20090611 专利内容由知识产权...
New dead time control circuit using the current sensor of SiC-MOSFET New dead time control circuit using the current sensor of SiC-MOSFET 丹羽 章雅 , 今澤 孝則 , 入江 将嗣 電気学会研究会資料. HCA 2014(51-52・54-61), 33-38,... 丹羽,章雅,今澤,孝則,入江,将嗣 - 《電気学会研究...
Delay Reduction Caused by on State Resistance of Power MOSFET using Elmore ModelThis thesis work presents a comprehensive study of parasitic elements on the MOSFET switching performance. To evaluate the MOSFET switching characteristics, a circuit-level analytical model has been considered that takes ...
Design of Full Adder Circuit Using Double Gate MOSFET This paper presents a design of a one bit full adder cell based on degenerate pass transistor logic (PTL) using Double Gate MOSFET. The design cell is dege... JK Sahani,S Singh - IEEE 被引量: 8发表: 2015年 Design and simulation of...
The reason why the switch-on of the IGBT is delayed is the gate resistance and capacitance of the MOSFET in the equivalent circuit of the IGBT. The N-channel MOSFET of the equivalent circuit of the IGBT is as shown in this section: ...
Design and analysis of high-performance CMOS logic circuits and power-aware arithmetic circuit structures on the deep-submicron process technology us into the deep-submicron era.The dissertation first deals with the different aspects of low-power high-speed logic circuits for deep-submicron electronics...