Defects generation in SiO2/HfO2studied with vari-able T-charge-T-discharge charge pumping VT2 CP. ZAHID M B,DEGRAEVE R,PANTISANO L,etal. Proc IEEE Int Reliab Phys Symp . 2007M.B Zahid, R. Degraeve, L. Pantisano, J.F. Zhang, G. Groeseneken, "Defects Generation in SiO 2 /HfO 2...
Interface defects in both anode and cathode are involved in the ITAT process, but the former dominates the oxide reliability. Based on the results of interface defect generation sensed by the LV-SILC, a new method to project lifetime (T) or monitor the oxide reliability was set up. 展开 ...
EL2-related defects in neutron irradiated GaAs/sub 1//sub -x/P/sub x/ alloys The generation of EL2-related defects in GaAsP alloys by fast neutron irradiation has been studied through deep level transient spectroscopy and photocapac... Munoz,Garcia,Jimenez,... - Appl. Phys. Lett.; (Unit...
We perform first-principles density functional calculations to study the electronic structure of Ni/HfO2 and Ni/SiO2 interfaces and the effect of O-vacancy (VO) defects on the Schottky barrier height and the effective work function. We generate two interface models in which Ni is placed on O-...
The energy distribution of interface states for Si(100)/HfC>2 structures are presented and compared to the hydrogen free Si(100)/SiO2 interface. Analysis of the interface state distribution and density from CV, GV and ESR, provides evidence that the frequency dependant features commonly observed ...
Hurley PK, Cherkaoui K, McDonnell S, Hughes G, Groenland AW. Characterisation and passivation of interface defects in (100)-Si/SiO2/HfO2/ TiN gate stacks. Microelectron Reliab 2007;47(8):1195-201.P. K. Hurley, K. Cherkaoui, S. McDonnell, G. Hughes, and A. W. Groenland, "...
W. Schmid.Heat transfer from localized absorbing defects to the host coating material in HfO2/SiO2 multilayer system. Proceedings of SPIE the International Society for Optical Engineering . 1997S.Papernov,et al.Heat transfer from localized absorbing defects to the host coating material in HfO2/SiO2...