Interface defect-assisted phonon scattering of hot carriers in graphene Interface defect-assisted phonon scattering of hot carriers in grapheneDOI: https://doi.org/10.1103/PhysRevB.96.075426doi:10.1103/PhysRevB.96.075426Menabde, Sergey G.Cho, HyunwooPark, Namkyoo SG Menabde,H Cho,N Park - 《...
Specifically, we focus on the scattering of phonons by boron (B), nitrogen (N), and phosphorus substitutions as well as single-and double-carbon vacancies in graphene. We show that changes of the atomic structure and harmonic interatomic force constants locally near defects govern the strength ...
A unique thermal transport mechanism has been predicted in graphene nanoribbons with Stone-Wales defects via two complementary approaches: the nonequilibrium Green's function method and the phonon-wave packet scattering method. In the low-energy region, the thermal current is carried by phonons with ...
Monitoring dopants by Raman scattering in an electrochemically top-gated graphene transistor. Nat. Nanotechnol. 3, 210–215 (2008). Article CAS PubMed Google Scholar Elias, D. C. et al. Control of graphene’s properties by reversible hydrogenation: evidence for graphane. Science 323, 610–613...
Defect scattering is well known to suppress thermal transport. In this study, however, we perform both molecular dynamics and Boltzmann transport equation calculations, to demonstrate that introducing defect scattering in nanoscale heating zone could surprisingly enhance thermal conductance of the system by...
We calculate the amount of defects needed for a transition from a nonconducting to a conducting regime (i.e., a metal-insulator transition) and establish the threshold of the defect concentration where the increase in impurity scattering dominates over the increase in carrier-induced conductivity. ...
electronic transport in metals is impeded through increased scattering at grain boundaries, which also serve as chargerecombination centersin semiconductors. Grain sizes in films are typically between 0.01 and 1.0 μm and are smaller, by a factor of more than 100, than common grain sizes in bulk...
Coupled-mode theory for stimulated Raman scattering in high-Q/Vm silicon photonic band gap nanocavity lasers The coupled-mode equations are derived to describe the dynamics of coupling between the pump mode and Stokes mode for stimulated Raman scattering in design... M Gerken,X Yang,CW Wong,....
An entirely different method of determiningcdis the proper evaluation of the X-ray scattering intensity in the Huang range and in the range between the Bragg reflections (see§ 3.3.2.2, alsoch. 12). The Huang scattering intensity is proportional tocd[(ΔV1irel)2+(ΔV1vrel)2](Haubold [...
Defect engineering is a promising method for improving light harvesting in photocatalytic materials like Zinc sulphide (ZnS). By altering the S/Zn molar ratio during hydrothermal processes, Zn and S defects are successfully introduced into the ZnS crystal. The band structures can be modified by addi...