Deep-level trapsTransport propertiesPhoton counting performancePolarization effectPolarization effect has become one of the main factors that limit the application of CdZnTe X-ray photoncounting detectors. In this study, we systematically investigate the impact of deep-level traps on the carrier transport...
Deep-level traps induced dark currents in extended wavelength InxGa1-xAs/InP photodetector. Ji X,Liu B,Xu Y,et al. Journal of Applied Physics . 2013... X Ji,B Liu,X Yue,... - 《Journal of Applied Physics》 被引量: 14发表: 2013年 InxGa1−xN/GaN band offsets as inferred from...
Deep-Level Traps in AlGaN/GaN- and AlInN/GaN-Based HEMTs With Different Buffer Doping Technologies Deep-level traps in AlGaN/GaN- and AlInN/GaN-based HEMTs with different buffer doping technologies are identified by drain current transient spectroscopy (... PV Raja,M Bouslama,S Sarkar,... ...
In the presence of an electric field in the space-charge region, these fluctuations become fluctuating traps for electrons as well as holes. As a result... TV Blank,YA Goldberg,OV Konstantinov - 《Nuclear Inst & Methods in Physics Research A》 被引量: 19发表: 2003年 Manipulating freely dif...
Stability of the increased Vt shift under a negative dc gate biasing and unipolar ac gate pulsing implies that these positive charges are deep-level hole traps with energy states above the Si conduction band edge. Because the defect states are outside the energy window of direct electron ...
MOSFET; hole traps; interface states; bipolar gate stress; charge pumping method; deep-level hole traps; direct-tunneling gate; interface state density; p-MOSFET; static negative-bias temperature stress; Hole traps; interface traps; negative-bias temperature instabi; 机译:MOSFET;空穴陷阱;界面状态...
Electron capture behaviors of deep level traps in unintentionally doped and intentionally doped n-type GaN Inn-type GaN films grown on sapphire substrates by metal-organic chemical vapor deposition such as unintentionally GaN and intentionally Si-doped GaN and I... HK Cho,CS Kim,CH Hong - 《Jou...
“Deep”Levels “DeepLevels”“DeepCenters”“DeepTraps”•Anoldresearchareaforme. •Mytreatmentissimilarto,butdifferentthenYC,Ch.4. •BWmentionDeepLevelsonlybriefly inSect.5.6,pp97&98. •Mydiscussionispartiallyfrommyold researchnotes,publishedpapers,& researchtalksI’vegiven. •Justconsidering...
Deep-level traps in as-grown and electron-irradiated homo-epitaxial n-GaN layers grown by MOVPE Deep-level traps in as-grown and electron-irradiated n-GaN grown by MOVPE on Ammono-GaN substrates have been characterized.Electric-field enhancement ofenf... J Plesiewicz,P Kruszewski,VP Markevich...
In some films on nominal (100) substrates, the I￢characteristics are also influenced by additional traps which are exponentially distributed in energy with a maximum occurring at the conduction bandedge. In contrast, the films deposited on off゛xis substrates have only one deep level located at...