DMP3056LSS-13 DIODES SINGLE P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR 获取价格 DMP3056LSSQ DIODES SINGLE P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR 获取价格 DMP3065LVT DIODES P-CHANNEL ENHANCEMENT MODE MOSFET 获取价格 DMP3065LVT-13 DIODES P-CHANNEL ENHANCEMENT MODE MOSFET 获取价...
19NXP Semiconductors RF Manual 16th edition1.3.2 Basic TV tunerApplication diagrambra500RF inputMOSFETVAGCFrom antenna,cable, active splitter, 数据表 search, datasheets, 电子元件和半导体, 集成电路, 二极管, 三端双向可控硅 和其他半导体的
描述: 场效应管(MOSFET) 500mW 60V 2A 1个N沟道 TO-243AA 国内价格 1+ 1.0868 1+ 0 50+ 0.8349 50+ 0 1000+ 0.6963 1000+ 0 库存:489 去购买 型号: 2SAR553P5T100 品牌: ROHM 封装: MPT3(SOT-89) 描述: 三极管(BJT) 500mW 50V 2A PNP SOT-89-3 国内价格 1+ 1.166 1+ 0 50...
21Kb/1PVHF POWER MOSFET New Jersey Semi-Conduct...BLF145 81Kb/1PN-Channel Enhancement Mode Quanzhou Jinmei Electro...BLF145 78Kb/12PHF power MOS transistor More results NXP半导体是一家公开交易的跨国公司,设计,开发和制造各种半导体和集成电路,用于各种应用,包括汽车,工业,通信和消费市场。
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描述:MOSFET Single P-Channel 60V,14A,52mohm 国内价格 香港价格 1+10.349001+1.24770 10+7.4383010+0.89680 100+5.43800100+0.65570 500+4.40790500+0.53150 1000+3.773101000+0.45490 2500+3.749102500+0.45200 5000+3.569405000+0.43040 库存:3922 去购买 型号:NVTFS5116PLTWG 品牌:onsemi(安森美) 封装:PowerWDFN8 描述...
118Kb/7PSilicon N Channel MOSFET Tetrode (For VHF applications, especially for input and mixer stages with a wide tuning range, e.g. in CATV tuners) Quanzhou Jinmei Electro...BF994S 37Kb/5PN-channel dual-gate MOS-FET Vishay SiliconixBF994SA ...
NTMSD3P303R2FETKYP-Channel Enhancement-ModePower MOSFET and Schottky DiodeDual SO-8 PackageFeatures High Efficiency Components in a Single SO-8 Package http://onsemi.com High Density Power MOSFET with Low RDS(on),MOSFETSchottky Diode with Low VF-3.05 AMPERES Independent Pin-Outs for MOSFET and...
BF998R 249Kb / 6P Silicon N-Channel MOSFET Tetrode Feb-13-2004 Vishay Siliconix BF998R 318Kb / 10P N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode Rev. 1.8, 05-Sep-08 More results 类似说明 - BF998R 制造商 部件名 数据表 功能描述 NXP Semiconductors BAP70AM 1Mb / 8P RF ...
Power MOSFETs and IGBT for PDP Merits Power MOSFET Low ON resistance Low Qg IGBT Low VCE (sat) High-speed switching High avalanche tolerance PDP System PDP trends Power device X Y High breakdown voltage High Intensity Panel Sustain circuit Sustain circuit High pressu...