Standard p- and n-type Cz Si wafers were4 exposed to a H-plasma at 250 °C and subsequently annealed at temperatures up to 600 °C in air. Investigations were done by Raman spectroscopy. H_2 molecules did appear as nearly free species in platelets/voids (Raman shift ～ 4150 cm~(-1)...
obtained fabricating solar cells from Cz-grown Si wafers. To under- stand why may lead to further future optimization of solar cell performance in this configuration. To this end, a range of electrical and structural characterization techniques has been applied [3]. Of these, synchrotron X-ra...
We report on a degradation of the electronic properties of uncompensated seed-end n-type (phosphorus-doped) Czochralski silicon wafers under light soaking. We unambiguously demonstrate that this degradation is related to the formation and/or activation of a bulk defect under illumination. We bring ge...
Cz-Si wafers in solar cell production: Efficiency-limiting defects and material quality control Photovoltaics International, 15 (2012), pp. 40-46 Google Scholar [3] B. Hallam, C. Chan, M. Abbott, S. Wenham Hydrogenation of defect-rich n-type Czochalski silicon and oxygen precipitates Solar...
C. Cui, D. Yang, X. Ma, M. Li, D. Que, Effect of light germanium doping on thermal donors in Czochralski silicon wafers. Mater. Sci. Semicond. Process.9(1), 110–113 (2006) ArticleCASGoogle Scholar M. Dhamrin, T. Saitoh, Characterization of the initial rapid decay on light-induc...
WeiJie Z, JieShi C, Shuai L (2021) Electronic and mechanical properties of monocrystalline silicon doped with trace content of N or P: A first-principles study. Solid State Sci 120:106723. https://doi.org/10.1016/j.solidstatesciences.2021.106723 Article CAS Google Scholar Download references ...
Methods to improve bulk lifetime in n-type czochralski-grown upgraded metallurgical-grade silicon wafers 2018, IEEE Journal of Photovoltaics The role of hydrogenation and gettering in enhancing the efficiency of next-generation Si solar cells: An industrial perspective ...
We report a simple, time-saving and effective low-temperature approach to avoid the effect of intrinsic defects in n-type Czochralski silicon (Cz-Si) wafers. This approach consists of submitting Cz-Si wafers to two annealing steps. The first annealing step was conducted in the temperature range...
The objective of this work is to carry out surface treatments and modification of single-crystal silicon (Si) wafers produced by the Czochralski (Cz) method for solar cell applications. Lapping and polishing processes were performed on Si wafers for removing saw damages which occurred when sliced ...
and about 1150° C. 72. A method according to claim 69 wherein the performing an RTA process for each of the wafers is preceded by purging oxygen from the atmosphere comprising argon and ammonia. 73. A method according to claim 72 wherein the performing an RTA process for each of ...