Yongjie Zhan等人采用CVD方法,以Mo金属薄膜为前驱体制备单层MoS2的方法,参见Yongjie Zhan,Zheng Liu,SinaNajmaei,Pulickel M.Ajayan,and Jun Lou,Large-Area Vapor-Phase Growth and Characterization of MoS2Atomic Layers on a SiO2Substrate.Small 2012,8(7),966-971.这种方法在二维材料中具有代表性,其采用的工艺...
Controlled experiments show that the deficiency of sulfur vapor at the beginning of growth induced 1D MoOxS2x crystals as precursors. The subsequent sulfurization changes them into MoS2 nanoribbons. These findings provide a facile approach to MoS2 nanoribbons and enrich the horizon of the preparation...
通过CVD的方法在不同的基地上合成了单层MoS2原子薄膜。选择三种不同的基地来合成,将SiO2作为非晶衬底,Al2O3或GaN作为六方晶系衬底。发现Al2O3的晶格常数不能和MoS2很好的匹配,而GaN的晶格常数可以和MoS2很好的匹配。研究了在三个不同的基地上单层MoS2原子薄膜畴的取向性
The atomic ratio of Mo : S near to 1 : 2 was beneficial to the preparation of larger﹕cale monolater MoS2. The intensity and peak shifting of PL demonstrated the defects and strain in monolayer MoS2. This facile patterned stimulated growth strategy has paved a pioneering way to obtain high...
Product description of MoS2 growth cvd machine The two-dimensional material MoS2 growth cvd device is composed of a preheating furnace, a reaction furnace, a vacuum system, a gas supply system, and a sliding rail support. The preheating furnace can be used to preheat and evapo...
YongjieZhan等人采用CVD方法,以Mo金属薄膜为前驱体制备单层MoS2的方法,参见YongjieZhan,ZhengLiu,SinaNajmaei,PulickelM.Ajayan,andJunLou,Large-AreaVapor-PhaseGrowthandCharacterizationofMoS2AtomicLayersonaSiO2Substrate.Small2012,8(7),966-971.这种方法在二维材料中具有代表性,其采用的工艺过程中,使用的Mo薄膜在500...
Two forms of seeding centers are observed during characterizations: (i) Mo-oxysulfide (MoOxS2-y) nanoparticles either in multi-shelled fullerene-like structures or in compact nanocrystals for the growth of fewer-layer MoS2; (ii) Mo-S atomic clusters in case of monolayer MoS2. In particular, ...
实施例2,在炉体中央温度为650°C时,将S从炉体边缘室温区移动至炉体前端180°C温区,在50sccm的高纯Ar环境下生长MoS2晶体 步骤1,清洗衬底,将S和MoO 2 前驱体放置在炉体中 1a)采用去离子水、丙酮、异丙醇依次对衬底进行10min的清洗超声; 1b)在第一石英舟中放入20mg的MoO 2 前驱体,将清洗后的衬底倒扣搭在...
实验方面:(1)设计制备了两种栅介质结构(MoS2/HfO2和MoS2/Al2O3/HfO2)的背 栅MoS2晶体管,并且选取两组栅介质在转移MoS2之前进行NH3等离子体处理。比 较发现,经过NH3等离子体处理的Al2O3/HfO2栅介质MoS2晶体管表现出最佳的电学 性能:Ion=15.2μA/μm,Ion/Ioff=1.53 10 ...
(PL) spectra show a strong relationship between interlayer coupling and the twist angles. In addition, the key parameters for CVD growing of TB-MoS2have been proposed. This synthesis strategy has been extended for preparing high-quality TB-WS2, sheding light on the precisely controllable growth ...