A microscopic multitransistor model is developed to analyze the impact of local dopant fluctuation on the intrinsic mismatch of long-channel MOSFET. A closed analytical formula for current mismatch is derived to show a nonscaled and self-consistent form /spl sim/[4+Log(L/L/sub min/)]/WL. ...
Self Biasing, Active Low Output During UV Lockout During UVLO, all chip functions are disabled in order to keep operating current at a minimum. The Gate Drive output, however, cannot be allowed to "float" high during this condition, because the Buck regulator N-channel MOSFET may inadvertently...
VOUT (V) 0.9 1.0 1.2 1.8 2.5 3.3 2.87 2.15 1.43 0.715 0.453 0.316 1000 1000 487 169 90.9 90.9 5.0 0.196 63.4 For other output voltages, the value of the required resistor can either be calculated using the following formula, or simply selected from the range of values given in Table 2...
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1 are MOSFET transistors in common gate configurations with a primary leg to perform current mirroring. Diodes 106A-106D are biased such that the lowest drain potential will determine the gate voltage. What is desired is a low-cost circuit and method to split currents of about 100 mA-5 A ...
In the exemplary embodiment, the filter capacitor C1discharges to the load according to a formula i(t)=V/R′×e−t/R′C(wherein R′ indicates an equivalent impedance of the inrush current limiting circuit12). At t=0, because the value of resistor R′ is small, and the capacitor C2...
A simple, complete, and analytical deep submicrometre SOI MOSFET model for accurate simulation of digital/analogue circuits is presented. The model was developed by using the drift-diffusion equation with a modified mobility formula to account for velocity overshoot, and was based on a quasi-two-...
RSET can be calculated by the following formula for a desired current limit: ILIM = V---O---C---P- RSET x 20 600 VOCP is 0.6 V. When the load current exceeds the threshold (ILIM), the parts respond within 1 μs (typ.) to turn off the switch and then regulate the switch gate...
In addition, the gain of the operational amplifier222boosts the output resistance seen at the first current electrode of the transistor224, as set forth in the following formula: ROUT=R226×g224×R224×A222 where ROUTis the output resistance seen at the first current electrode of transistor224...
The device starts operation by monitoring the IN bus. When VIN is above the Undervoltage Protection threshold (VUVP), the device samples the EN/UVLO pin. A high level on this pin enables the internal MOSFET to start conducting and allows current to flow from IN to OUT. When EN/UVLO is ...