This paper presents a current-controllable CMOS floating resistor (CCFR) possessing a number of interesting features.?Its functioning has been verified by performing simulations on Cadence VIRTUOSO software at 0.18?μm CMOS technology. The proposed circuit operates with a supply voltage of?±?0.6?V ...
Transient response and phase noise analysis is performed and after simulation the phase noise at 1MHz is -104.0dBc/Hz with supply voltage of 1 V. It is performed using cadence virtuoso gpdk045 nm CMOS technology. 展开 关键词: phase locked loop (PLL Current Starved Voltage Control Oscillator ...
Abstract The realization of special types of the generalized-immittance converters will be given here using the second-generation current conveyor. Of particular interest in this paper is the new realization of the voltage generalized-immittance converter having conversion immittance function proportional...
The main drawback of this design is that it provides a higher power dissipation compared to other source coupled logic structures. The proposed circuit provides lower sensitivity to temperature and power supply variation, with a superior control over power dissipation. Measurements of test structures ...
But after speaking and corresponding with a number of music specialists, I’ve come to understand there are indeed some brilliant virtuosos out there if only we would widen our net, seek them out, and drop the overused labels of “greatness” and “genius” too often attributed solely to ...
Transistor-level simulations were carried out within the Cadence Virtuoso environment. To highlight the effectiveness of the proposed approach in strongly reducing the effects of PVT variations, the same parametric and corner simulations executed for the OTA without the quiescent current control were ...
In the 65 nm CMOS process, with a power supply voltage of 1.2 V and a current source of 100 μA, the maximum current mismatch rate and the current variation rate of the new charge pump are only 0.21% and 1.4%, respectively. And the output voltage range of the proposed charge pump is...
All the post-layout simulation results are carried out using 0.18 µm 1P6M CMOS process using Cadence Virtuoso Spectre Circuit Simulator. The silicon chip area of our proposed work (including the output pad frame) is 1.44 mm2. The chip fabrication was sent out in January 2024 and the ...