In this study, the Cu 3- x Ag x Sb 1- y Te y Se 4 ( x =0–0.1; y =0–0.05) materials were fabricated by melting-ball milling-hot pressing process. The influences of configurational entropy on the microstructure and thermoelectric properties of Cu 3 SbSe 4 were evaluated. It was ...
As a result, the figure of merit reaches 0.87at 673K for Cu3Sb0.96Sn0.04Se4鈥 3% Cu3Sb0.94Sn0.06Se2.5S1.5.doi:10.1016/j.intermet.2019.03.009Li, J.M.Li, D.Song, C.J.Wang, L.Xin, H.X.Zhang, J.Qin, X.Y.Elsevier ScienceIntermetallics...
Pb doped Cu3Sb1-xPbxSe4 (x=0, 0.01, 0.02, 0.04 and 0.06) compounds have been synthesized via microwave-assisted solvothermal method followed by SPS progress, and their thermoelectric properties from 300K to 623K has been explored. On one hand, Pb doping in the Sb site improved the ...
Experimental transport data and X-ray absorption fine structure spectroscopy analysis suggest that the significantly enhanced electrical performance mainly originates from the diminished carrier scattering deformation potential. More importantly, Cu3SbSe4–CuAlS2 composites exhibit a weak temperature dependence ...
S alloyingpoint defectsolid solutionsthermoelectric propertiesCu3SbSe4 is a potential p-type thermoelectric material, distinguished by its earth-abundant, inexpensive, innocuous, and environmentally friendly components. Nonetheless, the thermoelectric performance is poor and remains subpar. Herein, the ...
BISMUTHCu 3 SbSe 4 , featuring its earth-abundant, cheap, nontoxic and environmentally-friendly constituent elements, can be considered as a promising intermediate temperature thermoelectric (TE) material. Herein, a series of p-type Bi-doped Cu 3 Sb 1 x Bi x Se 4 ( x = 0-0.04) samples ...
Modulating the Fermi level within the valence band, we could realize a power factor to the highest value of 232 W/mK 2 for the sample with x = -0.06 at 210 K. Considerable reduction in thermal conductivity is the key factor in enhancing the figure of merit to a maximum value of 0.033...
X-ray diffraction analysis revealed that the films show a tetragonal crystalline crystalline structure corresponding to the Permingeatite phase (Cu3SbSe4). The crystal size increases with the CuSe deposition time. It is identified by Raman spectroscopy that at low CuSe deposition times a low ...
The transport properties of Ga-doped Cu 3 Sb 1− x Ga x Se 4 compounds were investigated. As Ga content increased, the hole concentration of Cu 3 Sb 1− x Ga x Se 4 compounds increased, which led to an increase in electrical conductivity. Meanwhile, the Seebeck coefficient of the ...
Multiscale structureThermoelectric performanceA high-performance Cu3SbSe4-based material is obtained by compositing LaCl3 and introducing hierarchical architecture.LaCl3compositing induce the formation of phase interfaces, thus synergistically increasingσand suppressingκlat.Hierarchical architecture defects ...