Cu-etch-200 UBM is a slightly alkaline etchant for Cu and is used for the wet-chemical removal of Cu seed layers with selectivity to metals like Ni, Au, Cr, Sn, Ti, Al. Common areas of use are for semiconductor fabrication or microsystem technology especially for the removal of seed ...
a redox-coupled inherently selective atomic layer deposition (ALD) is introduced to tackle this challenge. The ‘reduction-adsorption-oxidation’ ALD cycles are designed by adding an in-situ reduction step, effectively inhibiting nucleation on copper. As a result, tantalum...
The Br ions could strongly bind to the three {100} side faces of a triangular seed, forcing the Pd atoms to grow from the three corners of a seed to generate a tripod. When compared with commercial Pd black, the Pd-Cu tripods exhibited substantially enhanced catalytic activity toward the ...
Upon the anisotropic growth of Pt on multiply twinned Cu seed particles, core-shell Cu-Pt nanoparticles with polyhedral morpho- logy were first prepared, which were subsequently transformed into alloy Cu3Pt nanoframes due to the Kirkendall effect between the Cu core and Pt shell. The as-prepared...
The method may also include treating the substrate with a conditioning solution comprising suppressors after a seed layer deposition to substantially eliminate conformal deposition in features of the substrate and plating metal ions from a plating solution onto the substrate. 展开 ...
Plasmon etchingNanoprobesNoble metal nanostructureHexadecyltrimethylammonium bromide (CTAB) acts not only as a stabilizer but also as the template in the seed-mediated growth approach, which is significant to the successful preparation of gold nanorods. However, the concentration of CTAB is difficult to...
4. Predip/Catalyst: Tin/palladium chloride to seed non-conductive surfaces for uniform and complete deposition of copper. 5. Electroless plate: Typically comprises a source of copper ions (copper sulfate), an active reducing agent (formaldehyde), sodium hydroxide, a complexing agent such as EDTA...
recently, Y. Hagendoorn et al. reported on the growth of graphene on SiO2underneath a 50 nm thick seed layer of Pt [43]. After graphene growth, the Pt layer has been removed (e.g. by wet-chemical etching). Therefore, the work by Hagendoorn et al. did not focus on graphene ...
et al. Selective Mechanical Transfer of Graphene from Seed Copper Foil Using Peel Rate Effects. ACS nano 9, 1325–1335 (2015). 16. Wang, S. et al. Shape Evolution of Monolayer MoS2Crystals Grown by Chemical Vapor Deposition. Chem. Mater. 26, 6371–6379 (2014). 17. Shi, J. et al....
et al. HCl and Br2-MeOH etching of Cu2ZnSnSe4 polycrystalline absorbers. Thin Solid Films 535, 83–87 (2013). 40. Fairbrother, A. et al. Development of a selective chemical etch to improve the conversion efficiency of Zn-rich Cu2ZnSnS4 solar cells. J. Am. Chem. Soc. 134, 8018–...