The diffusion coefficients of 44Ti, 63Ni and 59Fe in -TiAl single crystals have been measured by ion-beam sputter-sectioning technique, while those of In have been measured using ion implantation technique and secondary ion mass spectroscopy (SIMS) in order to clarify the diffusion anisotropy: ...
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The calculations were made in terms of the molecular dynamics model with a block of bound atoms. The sputtered deposit composition was found by ESCA and SIMS. The spatial distributions of Ni and Mo atoms prove to be different in ordered and disordered crystals. The calculated and experimental ...
A second smaller section was also cut away and utilized for the ToF-SIMS measurements. Raman and ToF-SIMS characterization measurements are available in the Supplementary Information (Supplementary Note 1). The elastic scattering collected during this experiment confirms the fluorite crystal structure ...
These observation results imply that the cyclic deformation predominantly occurred via the formation of SIMs and their reverse transformation, and the contribution of dislocations was small. In order to confirm this assumption, in-situ observation of the change in the deformation microstructure during cyc...
We designed a unique experimental set-up in the laboratory for high Na-doping by thermal diffusion in the bulk ZnO single crystals. SIMS measurement shows that Na concentration increases by 3 orders of magnitude, to ~3 × 1020 cm−3 as doping temperature increases to 1200 °C. ...
Single layers of GaInAsSb and multi layers of InAsSb were grown on (100)InAs substrate using a liquid phase epitaxial technique. Gettering action of Gd in the growth melt was confirmed by Van der Pauw, PL and SIMS method. MESA structure photo devices were fabricated and temperature dependenc...
SIMS Investigations of Iron Profiles in LiNbO 3 :Ti Waveguides On the Burgers Circuit Burgers Circuit Perspectives Amorphisation of Gallium Antimonide under the Conditions of Shear Deformation under Pressure Dilatometric Study of the Phase Transitions in NH 4 HSeO 4 Low-Temperature Dislocation ...
SIMS investigations on the diffusion of Cu in Ag single crystals. A cta M etall, 1980, 28 ( 3) : 291Dorner, P., Gust, W., Hintz, H.B., Lodding, A., Odelius, H., Predel, B.: Acta Metall. 28 (1980) 291.P. Dorner, W. Gust, M.B. Hintz, A. Lodding, H. Odelius,...
Within the resolution limit, no Nb agglomeration effects on the microscale were detected by SIMS. On the nanoscale the distribution of the Nb dopants was measured using 3D atom probe26. A small tip was cut out of the crystal with Fig. 4a. The which is in gnaoefaoordceusastgenrdeeiei...