The diffusion coefficients of 44Ti, 63Ni and 59Fe in -TiAl single crystals have been measured by ion-beam sputter-sectioning technique, while those of In have been measured using ion implantation technique and secondary ion mass spectroscopy (SIMS) in order to clarify the diffusion anisotropy: ...
SIMS quantification of low concentration of nitrogen doped in silicon crystals.BackgroundBulk concentrationNitrogenRaster changing methodSiliconA test method is needed to determine nitrogen lower than 1E15 atoms/cm3 in silicon crystals very accurately. In order to determine the concentration, it is ...
In experiments inducing crystal orientation growth, secondary ion mass spectrometry (SIMS) characterization was conducted on crystals obtained from the m-face and c-face (0001¯), showing O impurity concentrations of 2×1018cm−3 and 1×1019cm−3, respectively [37]. In addition to three-...
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A second smaller section was also cut away and utilized for the ToF-SIMS measurements. Raman and ToF-SIMS characterization measurements are available in the Supplementary Information (Supplementary Note 1). The elastic scattering collected during this experiment confirms the fluorite crystal structure ...
These observation results imply that the cyclic deformation predominantly occurred via the formation of SIMs and their reverse transformation, and the contribution of dislocations was small. In order to confirm this assumption, in-situ observation of the change in the deformation microstructure during cyc...
SIMS investigations on the diffusion of Cu in Ag single crystals. A cta M etall, 1980, 28 ( 3) : 291Dorner, P., Gust, W., Hintz, H.B., Lodding, A., Odelius, H., Predel, B.: Acta Metall. 28 (1980) 291.P. Dorner, W. Gust, M.B. Hintz, A. Lodding, H. Odelius,...
We designed a unique experimental set-up in the laboratory for high Na-doping by thermal diffusion in the bulk ZnO single crystals. SIMS measurement shows that Na concentration increases by 3 orders of magnitude, to ~3 × 1020 cm−3 as doping temperature increases to 1200 °C. ...
In this review paper, the residual strain of a polycrystalline halide perovskite film is systematically studied based on its structural inhomogeneity, which is closely correlated to the local carrier dynamics caused by a modulated electronic band structu
The SIMS microanalysis revealed isotopic zoning in a single silicon crystal that was produced by the FZ method. It is inferred that the silicon isotopic ratios in a silicon crystal during the FZ growth were controlled by the growth conditions such as the degree of supercooling of the melt as ...