Our solutions, including silicon carbide material, Power Modules, Discrete Power Devices and Power Die Products, are helping make cars, planes, renewables, race teams, cities, and everything in between, better, faster, greener, cooler, and more sustainable for billions to live better lives. ...
33 Cree EVL board VCC, Input PWM Signal, Enable CON4 Gate drive SiC Phase-leg block D3 Q2 D1 Q1 Cree Discrete SiC EVL Board CON1 CON3 CON2 CON5 Vcc DC/DC Vcc_out ACPL-W346 HS_I/P VCC, Input PWM Signal, Enable CON4 Vcc DC/DC Vcc_out Vg_HS Vs_LS 5V SiC Phase-leg ...
光伏逆变器升压SiC碳化硅二极管,分立IGBT,混合IGBT模块,光伏逆变器SiC MOSFET,IGBT Hybrid Discrete,混合三电平SiC-IGBT模块,IGBT单管,国产混合IGBT单管,国产SiC MOSFET,SiC Power MOSFET,国产SiC MOSFET模块,SOT-227碳化硅肖特基二极管模块,混合SiC-IGBT模块,BASi
SiC N-Channel MOSFET, 35 A, 1000 V C3M, 4-Pin TO-247 Wolfspeed制造商 : Cree Inc 封装/规格 : TO247 产品分类 : Discrete Transistors , MOSFET Datasheet: C3M0065100K Datasheet (PDF) RoHs Status: Lead free / RoHS Compliant 库存: 3882 Share: Pinterest LinkedIn WhatsApp Facebook Line...
Cree, Inc. reached an agreement with Advanced Power Technology (Nasdaq: APTI) for the purchase of its SiC ZERO RECOVERY Schottky Diode die to be packaged and sold as finished products under the APT brand name. APT intends to primarily address market segments not currently served by Cree, ...
For more information on Cree's newXLamp XP-G2 HE, please visit www.cree.com/led-components/products/xlamp-leds-discrete/xlamp-xp-g2, and to learn more about the newest Dmax™ high-power LED chip technology, please visit www.cree.com/led-components/landing-pages/nx About C...
See related items: Cree launches discrete 20A and 50A 650V SiC Schottky diode rectifiers for power supplies Cree launches first 50A SiC rectifiers Tags:CreeSiC Schottkys Visit:www.cree.com/power
TGF2941 13所 METDA NEDI NEDITEK芯片代理55所芯片代理Discrete Power GaN on SiC HEMT Transistor RF FET 放大器 功放 功率放大器 CREE TGF2941 2000 Qorvo DIE ￥400.0000元100~499 个 ￥300.0000元>=500 个 成都宏芯微科技有限公司 2年 -- ...
Wolfspeed的CGHV60170D是款氮化镓(GaN)高电子迁移率晶体管(HEMT)。与硅或砷化镓相比较,CGHV60170D具备更优越的使用性能;包含更高击穿场强;更高饱和电子偏移速率;和更高传热性。与Si和GaAs晶体管相比较,CGHV60170D具有更强的功率密度和更宽的带宽。 特征 ...
Cree射频元器件型号大全: 1.8-18GHz, 6-240W, 28-40V, GaN HEMTs: Discrete Bare Die: CGH60008D、CGH60015D、CGH60030D、CGH60060D、CGH60120D、CGHV1J006D、CGHV1J025D、CGHV1J070D、 CGH09120F、CGH21120F、CGH21240F、CGH25120F、CGH27015、CGH27030、CGH27060、CGH31240、CGH35015、CGH3...