? 2022 Elsevier LtdIn this paper, we present a modeling framework to simulate the electrical characteristics of SiC MOSFET. Our model also describes the mobility improvement with counter doping in channel. Our analyses show improved drive current and degraded/lower threshold voltage with a counter-...
Different from the conventional aging induced continuous mechanical performance deterioration in solder joints, a counter-intuitive “decrease-increase-decrease” variation in shear strength with a peak value 12 MPa higher than the initial state was captured in aged low-temperature BGA structure Cu/Sn–...
In this paper, we investigate the effect of counter-doping of nitrogen at the channel region of epitaxial n-channel 4H-SiC MOSFETs on the channel mobility and the threshold voltage. From this study, we have found that the channel mobility steeply improves as the nitrogen dose increases. At a...
doping the n-type drift layer below each of the shallow trenches with nitrogen by using a vertical ion implantation method; (d) forming a sidewall spacer on each sidewall of the silicon oxide film and the shallow trenches; and (e) forming a p-type gate layer by doping the n-type drift...
-type SiC substrate; (b) forming a plurality of shallow trenches disposed at predetermined intervals by etching the surface of the n-type drift layer with a silicon oxide film formed on the n-type drift layer used as a mask; (c) forming an n-type counter dope layer by doping the n-...
The slab models of pure SiC and its doping with Pt and Cr were investigated to study the catalytic activity on the basis of adsorption of triiodide and monoiodides as well as charge transfer from the slabs to the adsorbents. The iodide reduction reaction was modeled to study the splitting of...