According to the method, a high temperature resistant inorganic mineral with a layered structure is used as a template, a surfactant and a metal complexing agent are used for modifying the inorganic layered mineral, and gallium ions are adsorbed uniformly in the layered structure of the inorganic ...
δ-Doping of carbon into GaAs by metal-organic molecular beam epitaxy (MOMBE) has been studied in detail using trimethylgallium (TMG), Ga and As. TMG was a... T Yamada,M Shirahama,E Tokumitsu,... - 《Japanese Journal of Applied Physics》 被引量: 68发表: 1993年 Erratum: A technique...
The scientists found that their method effectively separates tantalum from capacitors, gallium from discarded light-emitting diodes and indium from used solar conductive films. By precisely controlling the reaction conditions, the team achieved a metal purity of over 95% and a yield of over 85%. Mo...
aAddition of Alkynes to a Gallium Bis-Amido Complex: Imitation of Transition-Metal-Based Catalytic Systems 炔的加法对镓Bis氨基的复合体: 基于转折金属的催化作用的系统的模仿[translate] a神奇的名词 Mysterious noun[translate] aDividend income from investment in securities[translate] ...
Green luminescence efficiency in gallium phosphide The present understanding of the operation of green-emitting GaP LEDs is reviewed. All existing visible LED devices which are made in III-V compound semiconductors are inefficient. In green-luminescent GaP this inefficiency is becoming u... DR Wight...
Preparation of the cross-sectional STEM sample A focused gallium ion (Ga+) beam scanning electron microscope (FIB-SEM), Helios NanoLab™, was used to prepare site specific specimens from a region that consists of the three constituent phases of the CCA. Using the electron beam, a protective...
Looks at the development of an enhancement mode (E-mode) heterostructure field-effect transistor process for gallium arsenide (GaAs) circuits by Motorola I... - 《Electronic Engineering Times》 被引量: 0发表: 2000年 加载更多研究点推荐 Low-Cost Si and Si/Si1xGex Heterostructure BiCMOS Technologi...
Although Galinstan® is a non-toxic liquid metal alternative to mercury, the viscoelastic and extremely wetting characteristics of Galinstan® have been the major bottleneck limiting the wide applicability of the gallium-based liquid metal. This paper tries to accomplish non-wettability to Galinstan...
08 December 2015 Jun-Wei Zhao1, Yue-Fei Zhang2, Yong-He Li2, Chao-hua Su1, Xue-Mei Song1, Hui Yan1 & Ru-Zhi Wang1 The synthesis of gallium nitride nanowires (GaN NWs) by plasma enhanced chemical vapor deposition (PECVD) are successfully demonstrated in this work. ...
Metal used in components of the crystalline semiconductor alloys indium gallium arsenide (InGaAs), indium gallium arsenide phosphide (InGaAsP), and the binary semiconductor indium phosphide (InP). The first two are lattice-matched to InP as the light-emitting medium for lasers or light-emitting diod...