Besland, Investigation of copper indium gallium selenide material growth by selenization of metallic precursors, J. Cryst. Growth 382 (2013) 56-60.Investigation of copper indium gallium selenide material growth by selenization of metallic precursors[J] . Junfeng Han,Cheng Liao,Tao Jiang,Huamu Xie,...
1. 铜铟镓硒化物 ...per Indium Selenide CIS)、铜铟镓硒化物(Copper Indium Gallium Selenide CIGS)、砷化镓(Gallium arsenide GaAs)baike.baidu.com|基于78个网页 例句 释义: 全部,铜铟镓硒化物 更多例句筛选 1. Other companies, notably Heliovolt and Nanosolar, are in a race to make thin-film pan...
the second, in thin films composed mainly of amorphous silicon, cadmium telluride (CdTe), copper indium selenide (CIS) or copper indium gallium selenide (CIGS); ➢ the third generation, that uses new materials beside silicon and produces multi-junction panels mainly consisting of indium gallium ...
英文别名 Gallium antimonide, 99.99% metals basis | Galliumantimonid | Copper Indium Gallium Selenide (CIGS) Sputtering Targets | Q418807 | Gallium antimonide, (single crystal substrate), <100>, diam. x thickness 2 in. x 0.5 mm | stibinogallane | MFCD00016101 | CS- 英文名称 Gallium anti...
Copper indium gallium selenide|铜铟镓硒 基本信息 更多信息 中文名称: 铜铟镓硒 中文同义词: 铜铟镓硒 英文名称: Copper indium gallium selenide 英文同义词: Copper indium gallium selenide;CIGS CAS号: 分子式: CuGaInSe4 分子量: 563.927 EINECS号: 信息错误报告 您的Email: ...
In this study, metal recovery from copper indium gallium selenide (CIGS) solar cells was carried out by using microwave pyrolysis, thermal oxidation and thermal chlorination technologies. Microwave pyrolysis provided over 90 % weight loss of CIGS solar cells, showing the potential of energy recovery...
网络铜铟镓硒 网络释义 1. 铜铟镓硒 ...的模铸及薄矽晶圆的切割都是相同的。此外,还包括像是碲化镉(cadminum telluride)及铜铟镓硒(copper-indium-gallium-seleni… ssttpro.acesuppliers.com|基于2个网页 例句 释义: 全部,铜铟镓硒
However, investigations of Copper-Indium-Gallium-Diselenide (CIGS) based hetero-junctions by admittance spectroscopy (AS) and deep level transient spectroscopy (DLTS) revealed different holes trap locations within the electron band gap in CIGS thin films. In case of CIS single crystals, trap centers...
Fig. 4: Lateral distribution of rubidium, indium and gallium. Elemental distribution of Rb, In and Ga (top view) at four different positions of the bare ACIGS absorber film (after removal of the window and buffer layers via an HCl etch), as obtained from nano-XRF analysis. Thickness differ...
ESCA analysis of copper indium selenide (CuInSe2) and copper gallium selenide (CuGaSe2) thin filmsESCA anal. of vacuum evapd. layers of CuIn selenide and CuGa selenidewith varying compns. showed large differences in surface compn. ofthe layers with small difference in the bulk com...