stringtexture1D, texture2D, texture3D, textureCUBEO valor da cadeia de caracteres é tratado como um endereço de recurso e resolvido da mesma forma que aAnotação de Inicialização de Parâmetro. Se o endereço do recurso não puder ser resolvido, a conversão será inválida...
These findings may have implications for resistance exercise prescription in that genetic constitution may influence adaptation to such training programs.M. MachadoR. PereiraD. P. Da SilvaV. C. ZovicoB. S. CardosoV. M. CurtyR. J. Finotti MachadoA. C. Hackney...
Nello specifico, la tecnologia GaN-on-Si per applicazioni di potenza può essere prodotta su fetta di silicio da 200 mm, mentre la tecnologia GaN-on-Silicon per applicazioni RF è più adatta – almeno per ora – alla produzione su fette di silicio da 150 mm. In entrambi i casi, ...
Centrosomes are essential organelles with functions in microtubule organization that duplicate once per cell cycle. The first step of centrosome duplication is the daughter centriole formation followed by the pericentriolar material recruitment to this c
Butanol was analyzed on a 7890A gas chromatography system (Agilent) with a flame ionization detector equipped with a 7694E headspace analyzer using a HP-5 column (30 m length, 0.32 mm id, 0.25 um film thickness). The oven program was set as follows (40°C for 4 minutes, 80°C for ...
Platycosides were prepared by preparative high-performance liquid chromatography (Prep-HPLC) (Agilent 1260; Agilent, Santa Clara, CA, USA) using a Hydrosphere C18 prep column (10 × 250 mm, 5 μm particle size; YMC, Kyoto, Japan). The column was eluted with water at a flow rate of ...
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Regarding a global methodology to estimate the energy–ecologic efficiency of thermopower plants Presently, the analysis of the impact of the thermopower plants on the environment as a result of harmful gas emissions is done individually for each type ... M Cardu,M Baica - 《Energy Conversion ...
Nello specifico, la tecnologia GaN-on-Si per applicazioni di potenza può essere prodotta su fetta di silicio da 200 mm, mentre la tecnologia GaN-on-Silicon per applicazioni RF è più adatta – almeno per ora – alla produzione su fette di silicio da 150 mm. In entrambi i casi, ...
No evidence for this process has yet been found leading to an upper limit < 2 x 10 exp -11 (90% confidence level) relative to ordinary muon capture. (ERA citation 10:005848)Bryman, D. ABritish Columbia Univ.Leitch, M. JNavon, INumao, TSchlatter, P...