A method is presented for employing contact over active gate to reduce parasitic capacitance. The method includes forming high-k metal gates (HKMGs) between stacked spacers, the stacked spacers including a low-k dielectric lower portion and a sacrificial upper portion, forming a first dielectric ...
For high density, a novel self-aligned contact over active gate process and elimination of the dummy gate at cell boundaries are introduced. The transistors feature rectangular fins with 7nm fin width and 46nm fin height, 5th generation high-k metal gate, and 7th-generation strained silicon. ...
Researchers Submit Patent Application, 'Reliability Macros for Contact Over Active Gate Layout Designs', for Approval (USPTO 20230160944) News editors obtained the following quote from the background information supplied by the inventors:\n"Scalability is an important factor for the advanceme... - 《...
FinFET with contact over active-gate (COAG) is implemented on 12nm node technology platform to optimize the Maximum Oscillation FrequencyA Razavieh,V Mahajan,WL Oo,... - IEEE Symposium on Vlsi Technology 被引量: 0发表: 2020年 Finfet body contact and method of making same A semiconductor dev...
CONTACT OVER ACTIVE GATE STRUCTURES USING DIRECTED SELF-ASSEMBLY FOR ADVANCED INTEGRATED CIRCUIT STRUCTURE FABRICATION A conductive structure is in the opening, the conductive structure in direct contact with a corresponding one of the trench contact structures or with a ... PA Nyhus,CH Wallace,M ...
Self-Aligned Top-Gate Metal-Oxide Thin-Film Transistors Using a Solution-Processed Polymer Gate Dielectric polymer gate dielectricself-alignedsolution processthin-film transistortop-gateFor high-speed and large-area active-matrix displays, metal-oxide thin-film ... S Choi,S Song,T Kim,... - 《...
The Borg Queen then sets about seducing the android, who explains that he is "fully functional" and "programmed in multiple techniques," but it has been just over eight years since he has used them. Just as he tells the Queen this, the two fall into a passionate embrace. Picard, Worf,...
A memory cell of a semiconductor device and a method for forming the same, wherein the memory cell includes a substrate having active regions and field regions, a gate layer formed over the substrate, the gate layer including a plurality of access gates formed over the active regions of the...
PURPOSE: To provide a no-voltage contact signal converter small in size with high packaging density by decreasing a heating value of an input stage resistor without worsening certainty of reading a condition of a no-voltage contact. ;CONSTITUTION: A relay RY1 is turned on while starting a cont...
A memory cell of a semiconductor device and a method for forming the same, wherein the memory cell includes a substrate having active regions and field regions, a gate layer formed over the substrate, the gate layer including a plurality of access gates formed over the active regions of the...