gate on 门通 OR gate “或”闸(=Or Else;joint gate;alternation gate)一种实现“或”逻辑运算的闸电路。一种电路组件,若任一输入是逻辑1,则输出也是逻辑1。相似单词 gate n. 1.[C]大门,栅栏门,围墙门 2.[C]大门口 3.[C]闸门,阀门 4.[C]登机门,登机口 5.[C](体育比赛的)观众人数 6.[U...
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Revealing Bipolar Photoresponse in Multiheterostructured WTe2-GaTe/ReSe2-WTe2 P-N Diode by Hybrid 2D Contact Engineering The van der Waals (vdW) heterostructures based on two-dimensional (2D) semiconducting materials have been thoroughly investigated with regard to practical ... E Elahi,M Rabeel,...
Intel标准工艺形成metal gate metal gate向下凹陷 向下凹陷的区域中填充氮化硅etch stop layer然后CMP磨平 然后覆盖一层氧化硅 最后进行contact patterning 最主要差异就是在metal gate的上面添加一层氮化硅和氧化硅,这样即使source/drain的contact overlaid on metal gate上,由于氮化硅介电质存在,也不至于短路,这样就大...
The changes in contact resistivity and I– V curve linearity after annealing of Pd, Ni/Au, Cr/Au, Co/Au, Pt and Au contacts on p-GaN after tempering below and above 500°C have been investigated. CTLM-layered structures on p-GaN were thermally stressed and electrically analyzed. The I...
Inhofer1, M. Boukhicha1, W. Yang1, M. Rosticher2, P. Morfin1, N. Garroum3, G. Fève1, J.-M. Berroir1 & B. Plaçais1 The paradigm of graphene transistors is based on the gate modulation of the channel carrier density by means of a local channel gate....
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最主要差异就是在metal gate的上面添加一层氮化硅和氧化硅,这样即使source/drain的contact overlaid on metal gate上,由于氮化硅介电质存在,也不至于短路,这样就大大提高了misalignment margin。 上面的二维图可能不好理解,这里要说明的是,Gate上也有contact,但是和source/drain的contact不在同一水平面位置,所以source...
Antenna for non-contact IC card gate facility An antenna mechanism for a noncontacting IC card system for communication with a noncontacting IC card passing a gate, the antenna mechanism including an antenna; and a conductive shielding body located on an outer side of the gate to el... S ...