Contact and edge effects in graphene devices Eduardo J. H. Lee1, Kannan Balasubramanian1, R. Thomas Weitz1, Marko Burghard1 and Klaus Kern1 1 Max-Planck-Institute for Solid State Research, Heisenbergstrasse 1, D-70569 Stuttgart. Germany. ...
edge contactgrapheneoptoelectronic devicesThe effects of graphene n-doping on metal–graphene (M–G) contacts in combination with 1D edge contacts is discussed by J.-H. Park and co-workers, as described on page 864, presenting a record contact resistance of 23 Ωμm at room temperature (19 ...
Introduced in silicon and carbon nanotube Schottky barrier transistors2,3, back gating proves particularly efficient in graphene4–6 and other 2D materials7, thanks to the weak screening at 2D. Going one step further, one can think of turning contacts to active elements by controlling inde- ...
However, the contacts of 2D devices usually possess a large Schottky barrier and rarely follow the Schottky-Mott rule, because of interfacial effects such as Fermi-level pinning. Herein, we summarize recent progress and developments in contact engineering of 2D materials for the realization of ohmic...
The effects of graphene n-doping on metal–graphene (M–G) contacts in combination with 1D edge contacts is discussed by J.-H. Park and co-workers, as described on page 864, presenting a record contact resistance of 23 Ωμm at room temperature (19 Ωμm at 100 K). This is lower ...
Edge effects in vortex-based nanocontact oscillatorsdomain structure (including magnetic bubbles)dynamic properties (dynamic susceptibility, spin waves, spin diffusion, dynamic scaling, etc.)The Oersted field about a nanocontact on a thin film can nucleate vortex formation in the film, and spin ...
In order to improve implant longevity and reduce wear, alternative bearing materials have been sought. Carbon-fibre reinforced poly ether-ether ketone (CFR-PEEK) and poly ether-ether ketone (PEEK) have been used for some time in spinal cages and bone fixation devices (Kurtz and Devine, 2007)...
which is widely used in neural interfacing devices as substrate or insulating material9,17. A thickness of 5–25 μm was used to make the GRACE devices lightweight and pliable. For the graphene layer, we used that directly grown on the curved surface of a lens-shaped quartz mold, which...
The vertical transistors and diodes could be alternative device designs for 2D electronic applications. Vertically stacked layered crystals have been used in different device designs and have shown great advantages over lateral devices, such as tunneling or ultrafast charge transfer-mediated device operation...
It is well known that piezoelectric materials have better performance in smart structures and devices, such as transducers, sensors and actuators, due to the excellent piezoelectricity. Piezoelectric devices often service in the vibration environment, and are subjected to the concentrated contact loads ex...