Conduction Model of Metal Oxide Gas Sensors 145 Fig. 2. Schematic representation of a compact sensing layer with geometry and energy band representations; z 0 is the thickness of the depleted surface layer; z g is the layer thickness and qV s the band bending. a) represents a partly ...
A phenomenological approach to the operation of metal oxide gas sensors, the Integrated Reaction Conduction (IRC) model, is proposed which integrates the gas-surface reactions with the electrical conduction process in a weakly sintered, porous metal oxide. An effective ...
Oxide-ion conductors have found applications in various electrochemical devices, such as solid-oxide fuel cells, gas sensors, and separation membranes. Dion–Jacobson phases are known for their rich magnetic and electrical properties; however, there have been no reports on oxide-ion conduction in thi...
Γ–XZ interface matrix approach with a pseudo-potential calculation for a GaAs12/AlAs12 superlattice and obtains very good agreement for a α0Γ–X1 = 0.338 eV Å (or t = 0.5) [32], whereas Liu uses a value of 0.1 eV Å [33] based on the pseudo-potential model of Marsh [37]...
The obtained activation energies of protons, deuterons, positive holes, and oxide ion vacancies were 0.74 {+-} 0.05, 0.70 {+-} 0.05, 1.21 {+-} 0.07, and 2.5 {+-} 0.5 eV, respectively. Based on the model of defects equilibria and these experimental findings, the protonic conduction ...
Such behavior of lnI vs V plots is known as double-exponential or two parallel diodes model Conclusion Au/(0.07Zn-PVA)/n-4H-SiC (MPS) type SDs were fabricated and their current-conduction/transport were investigated in the wide range of temperature (100–320 K) to get more information ...
As with CNTs, the electronic structure of graphene is most easily discussed as applicable to pure, defect-free graphene first, then conditionally extendable to “imperfect” (as-produced) graphene. Additionally, in the case of graphene, discussion of the
2-D hole gas (2DHG) and 2DEG are induced at the GaN/Al0.260.26Ga0.740.74N and AlN/GaN hetero-interfaces, respectively. The MCs consist of 2DEG, with nn being the channel number. The metal-insulator-semiconductor (MIS) TG extends into the GaN buffer layer, and we indicated the ...
A paired interstitialcy model is used as a basis for qualitative comparisons of conductivity and dielectric phenomena in β-alumina crystals and in glass. ... MD Ingram - 《Cheminform》 被引量: 32发表: 2010年 ChemInform Abstract: Relationship of STM and AFM Images to the Local Density of Sta...
To achieve this goal, thin films of high crystalline quality—as close to a single crystal as experimentally possible—but with different strain values are employed as model systems. The MOSS is particularly suited for this investigation as the stress state can be probed in-plane, precisely in ...