1) conduction band offset 导带偏移 1. 05eV and theconduction band offsetis ΔE c=0. 05eV,导带偏移ΔEc=0。 2) valence-band offset 价带偏移 1. A theoretical method for determining thevalence-band offset(VBO) at strained alloy type heterojunctions is presented by combining the cluster expansi...
The conduction band offset value for an In 0.5 (Ga 0.3 Al 0.7 ) 0.5 P/In 0.5 Ga 0.5 P heterojunction has been measured by means of deep level transient spectroscopy (DLTS) on Au/n-InGaAlP Schottky diodes with an InGaP quantum well incorporated into InGAlP.The offset value thus obtained ...
Band offsets of high K gate oxides on III-V semiconductors On the other hand,SrTiO3has minimal conduction band offset. The valence band offsets are also reasonably large, except for Si nitride on GaN andSc2O3... J Robertson,B Falabretti - 《Journal of Applied Physics》 被引量: 541...
待解决 悬赏分:1 - 离问题结束还有 the negative conduction band offset (cliff)问题补充:匿名 2013-05-23 12:21:38 负的导带偏移(悬崖) 匿名 2013-05-23 12:23:18 负面传导带偏移(Cliff) 匿名 2013-05-23 12:24:58 消极传导带抵销了(峭壁) 匿名 2013-05-23 12:26:38 负传导带偏移 ...
摘要: Numerical modeling of conduction band offset (Δ EC) between an n-type CdSO window layer and a p-type CdTe absorption layer on the effect of the cadmium telluride (CdTe) solar cells was studied...关键词: CdTe solar cell conduction band offset surface recombination rate thermionic ...
Debbar N,Biswas D,Bhattacharya P.Conduction-band offsets in pseudomorphic InxGa1-xAs/Al0.2Ga0.8As quantum wells (0.07≤x≤0.18) measured by deep-level transient spectroscopy.Physical Review B Condensed Matter and Materials Physics. 1989Debbar N,Biswas D,Bhattach...
We investigate the suitability of Si 1−yCy for n -channel electronic devices by calculating the band offsets of Si1−y C ylayers grown on silicon. A reformulated tight binding method with measured spectroscopic term values is employed for calculation of valence band offsets. Calculation of ...
12: Conduction band offsets in strained InxGa1−xAs/GaAs QWs as a function of composition. Dashed line — as recommended in Ref. 9. Open circles ... VI Zubkov,MA Melnik,AV Solomonov,... - 《Physical Review B》 被引量: 24发表: 2004年 Large valence-band offset in strained-layerInxG...
where J is the current density, A* is the effective Richardson constant, m0 is the free electron mass, m* is the effective electron mass in dielectric, T is the absolute temperature, q is the electronic charge, qϕB is the Schottky barrier height (i.e., conduction band offset), E ...
Experimental/ aluminium compounds conduction bands electric admittance gallium arsenide III-V semiconductors indium compounds interface electron states semiconductor quantum wells/ semiconductors frequency resolved admittance measurements single-quantum wells conduction band offset capture coefficient capacitance conductanc...