The current of the intrinsic semiconductor is the sum of these two currents. The particles carrying the charge are called carriers. When there is a free electron, there is bound to be a hole, so the free electron and the hole pair are the same. When free electrons fill a hole in ...
TheconceptofFermiLevel（1）：费米能级的概念（1）
This article investigates an improved 4H-SiC trench gate metal-oxide-semiconductor field-effect transistor (MOS-FET) (UMOSFET) fitted with a super-junction... P Shen,Y Wang,XJ Li,... - 《中国物理b》 被引量: 0发表: 2021年 SUPER-JUNCTION STRUCTURE AND METHOD FOR MANUFACTURING SAME A super...
Significant evidence linking changes in the macroscopic properties of semiconductors with recombination processes associated with injection current components has accumulated during the past 15 years or so. These effects play a critical role in performance degradation for many semiconductor devices. In this ...
会议名称: Proceedings of the 10th International Symposium on Power Semiconductor Devices and ICs. ISPSD'98 (IEEE Cat. No.98CH36212) 会议时间: 06 August 2002 主办单位: IEEE 被引量: 18 收藏 引用 批量引用 报错 分享 全部来源 求助全文 IEEEXplore 掌桥科研 dx.doi.org ResearchGate 相似文献 参考...
It is useful to think of Fermi level as a tool to determine electron/hole occupation at the conduction or valence band for a doped as well as undoped semiconductor in equilibrium. 4 Slide # 9/7/2006 Dr. F. Nkansah – Physical Electronics Electron concentration in Conduction Band c C E E...
In any plasmonic structure the latter will typically exceed ΓWG by orders of magnitude when the corresponding emitter is very close to a metallic surface (see e.g.26,29,30) which is typically ascribed to electron-hole pair creation. As the field of the excited mode in the simple plasmonic...
This paper presents a new concept for the generation of terahertz (THz) radiation. Instead of accelerating carriers in an external bias field as state-of-the-art THz emitters generate THz radiation, the THz radiation is generated by lateral Photo-Dember currents induced by inhomogeneous optical ex...
VI. Reactive ion etching lag model for contact hole silicon dioxide etching in an electron cyclotron resonance plasma Etching of high aspect ratio patterns induces reactive ion etching (RIE) lag. This effect is studied for oxide features etched in a high density plasma exc... O Joubert,GS ...
On the other hand, the development of hole ISB devices is hindered by the complexity of the valence-band structure, and by the presence of heavy-hole and mixed light-hole/split-off subbands at comparable energies leading to additional nonradiative decay channels. As a result, more recently ...