in-memory macro that is based on a three-dimensional vertical resistive random-access memory fabricated using a 55 nm complementary metal–oxide–semiconductor process. Our macro can perform 3D vector–matrix multiplication operations with an energy efficiency of 8.32 tera-operations per second ...
Here we report a two-kilobit non-volatile computing-in-memory macro that is based on a three-dimensional vertical resistive random-access memory fabricated using a 55nm complementary metal–oxide–semiconductor process. Our macro can perform 3D vector–matrix multiplication operations with an energy ...
Implementations of artificial neural networks that borrow analogue techniques could potentially offer low-power alternatives to fully digital approaches1–3. One notable example is in-memory computing based on crossbar arrays of non-volatile memories4–7
STAR-SRAM: 43.06-TFLOPS/W, 1.89-TFLOPS/mm2, 400-Kb/mm2 Floating-Point SRAM-Based Digital Computing-in-Memory Macro in 28-nm CMOS 来自 IEEEXplore 喜欢 0 阅读量: 14 作者:CT Lin,J Oh,K Lee,M Seok 摘要: A digital computing-in-memory (DCIM) macro gains increasing attention as a key...
However, linearity, symmetry, and some other characteristics are more important for computing-in-memory systems.38 Download: Download full-size image Fig. 3. Basic RRAM device programming operation. LRS: low resistance state; HRS: high resistance state. Array and macro considerations Operation units...
Disclosed are a computing-in-memory circuit and chip, and an electronic device. The computing-in-memory circuit comprises: a resistive random access memory array (1), a clamping circuit (2), a current mirror (3) and an analog-to-digital conversion circuit (4). The clamping circuit (2) ...
randomly connected network of neurons called a “reservoir.” In-memory computing is a growing paradigm that uses memory devices to storeandperform computations, which is inspired by the brain’s ability to perform computation and storage in the same physical structure, such as in the synapses bet...
A CMOS-integrated compute-in-memory macro based on resistive random-access memory for AI edge devices. Nat. Electron. 2021, 4, 81–90. [Google Scholar] [CrossRef] Le Gallo, M.; Sebastian, A.; Mathis, R.; Manica, M.; Giefers, H.; Tuma, T.; Bekas, C.; Curioni, A.; Eleft...
by using its many processors to explore every possible way every part of the molecule might behave. But as it moves past the simplest, most straightforward molecules available, the supercomputer stalls. No computer has the working memory to handle all the possible permutations of molecular behavior...
As traditional programming languages (especially high-level languages) are not aware of the above memory hierarchy explicitly, the programmers only need to access the data in memory directly. Then, compilers (such as adopting data prefetching and register allocation) and hardware architectures (such ...