Indium Corporation sells compounds based on the elements indium, germanium, gallium, and tin used in the manufacturing process of a number of high-tech devices.
as tetraethyl lead are made by reacting lead oxide or sulphide with a stable non-lead metal organic compound of general formula M1Ry, M1M2Ry, or XM1Ry, where M1 and M2 are metals as defined below, R is a non-aromatic or aromatic hydrocarbon radical and y is an integer from 1 to 4...
Sn-Ag-Cu based alloys are well known as an important series of lead-free solders. Gallium has been found to be beneficial for the melting point of the Sn-A... YWH Chen - 《Powder Metallurgy & Metal Ceramics》 被引量: 0发表: 2017年 加载更多来源...
[150] prepared Pt/ZnO co-catalysts and synthesized gallium modified co-catalysts by hydrothermal method. The addition of Ga changes the structure of Pt/ZnO cocatalyst, resulting in ZnGa2O4 with spinel structure. As a co-catalyst, Pt can well remove electrons from ZnO surface, thus hindering ...
The silica reaction tube, 9, contains arsenic, 13, at one end while the other, hotter, end contains gallium and silicon in a silica vessel, 14, and some As 2 O 3 . The narrowness of the connecting tube, 11, prevents the Ga 2 O which is formed in the hot zone from diffusing to ...
9.1.8.4 Boron, Aluminium, Gallium, Indium and Thallium Tris(trimethylsilyl) derivatives have been prepared for all the sp block Group III elements except boron. Trimethylsilyllithium forms adducts with boranes and the methyl esters of the methylboric acids (equation 422). The greater Lewis acidity...
Ya., Liquid-Vapor Equilibrium of Binary Systems of Trimethytaluminum with Methyl Derivatives of Zinc, Gallium, Tin, and Lead, Tr. Vses. Nauchn. Issled. Inst. Khim. Reaktivov Osobo Chist. Khim. Veshchestv No. 41 [1979] 69/73; C.A. 93 [1980] No. 192977. Google Scholar Chernykh...
Kinetic parameters for stereochemical rearrangements of trifluoroacetylacetonates of the trivalent metals aluminum, gallium, indium, cobalt, and rhodium were measured using F19 magnetic resonance spectroscopy. Coalescence of resonance lines at 103, 61.5, and 36 sec.-1, respectively. The cis to trans ...
·12H2O (whereMis a singly charged cation such as K+), also contain the Al3+ion; M can be thecationofsodium,potassium,rubidium,cesium, ammonium, orthallium, and the aluminum may be replaced by a variety of other M3+ions—e.g.,gallium,indium,titanium,vanadium,chromium,manganese,iron, or...
13. An indium gallium zinc oxide (IGZO) material made by the process of claim 7. 14. A thin film transistor comprising the IGZO material of claim 13. 15. A process for making a material, the process comprising: providing an ink that comprises a molecular precursor compound according to cla...