The paper shows the performance comparison between Si, SiC and GaN based power MOSFET/HEMT are performed with the help of LTSPICE simulation software by considering a DC-DC Boost converter. It can be observed that the efficiency of the converter primarily increases when GaN and SiC switches are...
SiC MOSFETGaN MOSFETIn this study, Si, SiC, and GaN based semiconductor switching elements to be used in the design of new generation high gain DC-DC converters are compared. Each switching element is tested at different frequencies and different pulse period ratios. The efficiency and output ...
This paper presents a simulation comparison of the static and dynamic performance of silicon IGBTs with different SiC and GaN based lateral and vertical power transistors (HEMT, MOSFET and IGBT) with breakdown voltage ratings between 1.2 kV to 15 kV. The strengths and weaknesses of different ...
This paper discusses the result of work by Raytheon and Group4 Labs to compare performance between GaN HEMTs and a GaN MMIC when fabricated on silicon carbide and diamond substrates. Wafers were fabricated and the performance of the epi, process coupons, and individual FETs are compared. We als...
Temperature and doping dependencies of electron drift velocity in wurtzite ZnO structure have been calculated using ensemble Monte Carlo method and compared with electron drift velocity in GaN and SiC in steady-state and transient situation. The following scattering mechanisims i.e., impurity, polar ...
As we did when the Apple X and Huawei Mate 10 phones were released, we have compiled a brief comparison between some of the biggest flagship phones out there… this time, centred around Samsung’s Galaxy S9+. Here, we are compa...
Discover the latest in semiconductor advancements and challenges in the November 2024 Chip Observer. Explore licensing disputes, trade shifts, domestic tool breakthroughs, and key industry milestones, plus insights on SiC, GaN, and Nintendo.
Comparison of Different GaN Etching Techniques
Explore licensing disputes, trade shifts, domestic tool breakthroughs, and key industry milestones, plus insights on SiC, GaN, and Nintendo. Learn More November 26, 2024 Cost Modeling ICs in Apple iPad Air 13” – #1 The M2 SoC Explore the cost dynamics of Apple’s M2 SoC in the iPad...
Comparison of spin lifetimes in n-Ge characterized between three-terminal and four-terminal nonlocal Hanle measurements K. Kawakami, and K. L. Wang, "Comparison of spin lifetimes in n-Ge characterized between three-terminal and four- terminal nonlocal Hanle measurements,... L-T,Chang,W,......