4) breakdown,collector-base 集极-基极击穿 5) collector breakdown voltage 集电极击穿电压 6) collector current runaway 集电极电流击穿 补充资料:击穿电压试验 分子式: CAS号: 性质: 又称油击穿试验(oil puncture test)。测定瓷件能承受工频击穿电压的数值。它表明承受最高电压的能力。试验时,把试件整个浸没在...
一般不关心这个参数,这个是b~c击穿电压,一般我们关心的都是c~e击穿电压,这个耐压值才是真正的这个三极管的工作耐压值,b~c一般都比c~e的那亚值高,但是你用不到的说啊
collector-base breakdown voltage专业释义 <电信> 集电极-基极击穿电压词条提问 欢迎你对此术语进行提问>> 行业词表 石油纺织轻工业造纸采矿信息学农业冶金化学医学医药地理地质外贸建筑心理学数学机械核能汽车海事消防物理生物学电力电子金融财会证券法律管理经贸人名药名解剖学胚胎学生理学药学遗传学中医印刷商业商务大气科学...
2) collector to-boase voltage 集电极-基极电压3) collector-base breakdown voltage 集电极基极击穿电压4) base collector 基极集电极5) voltage,collector 集电极电压 例句>> 6) collector-base current 集电极基极电流 例句>> 补充资料:标准操作冲击电压波形(见冲击电压发生器) 标准操作冲击电压波形(见冲击...
The breakdown voltage of the base-collector junction is an important parameter for power transistors. In this paper, the open-emitter breakdown voltage of an epitaxial bipolar high-power transistor with graded collector is computed numerically. A general expression for breakdown voltage as a function ...
Collector-BaseBreakdownVoltage 集电极-基极击穿电压 V (BR)CBO I C =-50uA,I E =0-40---V Collector-EmitterBreakdownVoltage 集电极-发射极击穿电压 V (BR)CEO I C =-1mA,I B =0-32---V Emitter-BaseBreakdownVoltage 发射极-基极击穿电压 V (BR)EBO...
This work investigates the impact of collector-base (CB) junction traps on low-frequency noise in high breakdown voltage (HBV) SiGe HBTs. By comparing the base current and 1/ f noise at the same internal emitter-base (EB) voltage of the standard breakdown voltage (SBV) and HBV devices, ...
electric breakdownelectron avalanches/ epitaxial transistorslow resistivity substrateavalanche voltage characteristicsdepletion layer boundariescollector base avalanche voltage/ B2560J Bipolar transistorsThe effect of a low resistivity substrate on the avalanche voltage characteristics of diffused epitaxial pnn + ...
(BR)CEO Collector-emitter breakdown voltage IC=30mA ;IB=0 VCEsat Collector-emitter saturation voltage IC=10A ;IB=10mA VBEsat Base-emitter saturation voltage IC=10A ;IB=10mA ICBO Collector cut-off current VCB=150V ;IE=0 IEBO Emitter cut-off current VEB=5V; IC=0 hFE DC current gain IC...
I know the base-collector junction acts like a diode, but I can't seem to find any info on what the reverse breakdown voltage is (there doesn't seem to be a max VBC listed in the datasheet). Should I destroy a 2n3904 to find out? Perhaps there is a way I can limit the current...