a热网循环泵变频柜 Hot net circulating pump frequency conversion cabinet[translate] a你继续发信回去给朋友 You continue to send a letter go back for the friend[translate] a麦拿 Mai Na[translate] a柠檬树 Lemon[translate] aCollector to Emitter Breakdown Voltage 收藏家到放射器击穿电压[translate]...
英语翻译collector-emitteremitter-collectorbreakdown voltage collector-emitter 答案 试译:集电极--发射极发射极--集电极集电极--发射极击穿电压. 结果二 题目 英语翻译 collector-emitter emitter-collector breakdown voltage collector-emitter 答案 试译: 集电极--发射极 发射极--集电极 集电极--发射极击穿电压. 相关...
2) emitter-collector breakdown voltage 发射极集电极击穿电压3) emitter-collector diffusion current 发射极集电极扩散电流4) voltage,collector-emitter 集电极-发射极电压5) collector-to-emitter current gain 集电极-发射极电流增益6) emitter shunt conductance 发射极分路电导...
题目 举报 英语翻译collector-emitteremitter-collectorbreakdown voltage collector-emitter 扫码下载作业帮搜索答疑一搜即得 答案解析 查看更多优质解析 解答一 举报 试译:集电极--发射极发射极--集电极集电极--发射极击穿电压. 解析看不懂?免费查看同类题视频解析查看解答 ...
Voltage pulses are applied across collector load resistor of a transistor to determine breakdown voltage between emitter and collector. This system avoids destruction of the transistor (1) and risk of oscillations. The base of the transistor under test is driven from a current generator (2) while...
摘要: The communication presents a set of design curves of collector-emitter breakdown voltage BVceo versus gain hFE for various collector doping levels and thickness for n-p-n transistors. The results include epitaxial layer punch through and radial c-b junction breakdown....
high collector-emitter breakdown voltage that exist in conventional bipolar power transistors (BPTs), a new bipolar power transistor called the trench base-... Chen, Q.,Sin, J.K.O.,Institute of Electric and Electronic Engineer - Power Semiconductor Devices and ICs, 1998. ISPSD 98: Proceedings...
194Kb/2PCollector-Emitter Breakdown Voltage-: V(BR)CEO = 300V(Min.) BUY79 194Kb/2PCollector-Emitter Breakdown Voltage-: V(BR)CEO = 350V(Min.) 3DD4515 207Kb/2PCollector-Emitter Breakdown Voltage-: V(BR)CEO= 400V(Min) 2SB565
Collector-BaseBreakdownVoltage 集电极-基极击穿电压 V (BR)CBO I C =-50uA,I E =0-40---V Collector-EmitterBreakdownVoltage 集电极-发射极击穿电压 V (BR)CEO I C =-1mA,I B =0-32---V Emitter-BaseBreakdownVoltage 发射极-基极击穿电压 V (BR)EBO...
High Breakdown Voltage: The BF423 F423 PNP Silicon Transistors are engineered to withstand high breakdown voltages, ensuring reliable performance in a range of applications. Low Collector-Emitter Saturation Voltage: These transistors exhibit a low collector-emitter saturation voltage, which translates to ...