germaniumisotope effectsthermal expansion/ isotope effectthermal expansion coefficientGe30 to 230 K/ A6570 Thermal expansion and thermomechanical effects/ temperature 3.0E+01 to 2.3E+02 K/ Ge/elThe first experimental and theoretical investigation of the difference in the temperature behavior of the ...
Dependence of the thermal expansion coefficient on the size and shape of diamond, silicon and germanium nanocrystalsthermal expansion coefficientnanocrystalsRP modelUsing the model of a nanocrystal in the form of a rectangular parallelepiped with variable shape (RP model), the dependence of the thermal...
On a change in the elastic properties with decreasing size of diamond, silicon, and germanium nanocrystals Dependence of the thermal expansion coefficient (α p ) on the size (number N of atoms) and shape of the nanocrystal surface of an elementary monatomic ... Magomedov,M.,N. - 《Journal...
Thermal Expansion of Some Crystals with the Diamond Structure The linear coefficient of thermal expansion of silicon, germanium, and indium antimonide has been measured in the range 4.2°K-300°K using an interferomet... Gibbons,D. F - 《Physical Review》 被引量: 251发表: 1958年 Thermal ex...
Figure 5. Shear modulus of silicon and germanium as a function of direction in (a) (100) plane and (b) (110) plane. G∥ and G⊥ denote in-plane and perpendicular-to-plane shear modulus, respectively. Table 2. Stiffness and compliance coefficients of silicon and germanium Empty Cells11s12...
As used herein, the term “substrate” refers to substrates constructed of materials such as, but not limited to: silicon, silicon dioxide, aluminum oxide, sapphire, germanium, gallium arsenide (GaAs), alloys of silicon and germanium, and/or indium phosphide (InP). Further, for the purposes ...
A multi-chip module is constructed by aligning prewired chips on a support wafer and depositing a nonconductive thermally conductive and electrically nonconductive material having a coefficient of thermal expansion that approximate that of the chips (e.g. silicon, silicon carbide, silicon germanium,...
A multi-chip module is constructed by aligning prewired chips on a support wafer and depositing a nonconductive thermally conductive and electrically nonconductive material having a coefficient of thermal expansion that approximate that of the chips (e.g. silicon, silicon carbide, silicon germanium,...
The PN junction may be present in the semi-conductor body originally or it may result from the presence of impurity materials in the solder. In the rectifier shown a silicon or germanium disc 1 is soft-soldered between tungsten or molybdenum discs 2. The lower metal disc is soft-soldered ...
Features of the thermal expansion coefficient α ( T ) of crystal lattices with different isotopic compositions have been analyzed. The case of germanium lattices has been studied in detail.doi:10.1134/1.558667A. P. ZhernovNauka/InterperiodicaJournal of Experimental and Theoretical Physics...