COBALT SILICIDE SINTERED TARGET MATERIAL FOR SPUTTERING HARDLY GENERATING PARTICLES DURING FILM FORMATIONPURPOSE: To suppress the generation of sputtered particles at the time of film formation and to enable the increase of the output and size of a sputtering device by dispersing specified unreacted ...
A Gibbs ternary diagram approach is used to understand the temperature sequence of silicide and carbide formation, and stability in W SiC ternary systems. Limitations of the thermodynamic approach are discussed, and comparisons with experimental results are made....
the probability of native oxide forming on the surface of the silicon substrate is greatly reduced or eliminated. This permits the formation of a uniform silicide layer, such as cobalt silicide, across the surface
Additional cobalt formation acts may then be performed using the nucleation layer as a base to form a thicker cobalt metal layer, for example, using cobalt ALD. If the feature is not already self-aligned from being formed on exposed silicon during a self-aligned silicide process (i.e. a “...
COBALT SILICIDE SINTERED TARGET MATERIAL FOR SPUTTERING HARDLY GENERATING PARTICLES DURING FILM FORMATIONPURPOSE: To suppress the generation of sputtered particles at the time of film formation and to enable the increase of the output and size of a sputtering device by dispersing a specified unreacted ...
terbium manganese silicidemagnetic propertiesmagnetic structureneutron diffractionConsistent sets of thermodynamic functions for the Al-Ta system are obtained by a computer-operated least squares method applied to all of the experimental phase diagram and thermodynamic data from the literature. Special ...
The first crystalline phase formed by solid state reaction is found to be CoSi, rather than Co 2 Si which is predicted by the EHF model to form first. The difference in the experimental and predicted first crystalline silicide is dicussed. For Co:Si atomic concentration ratios of 2:1 and ...
phase diagramsthin filmsvacuum deposition/ cobalt disilicidecodepositionstrained epitaxial substratesilicon-germanium thin filmsdeposition methodThe formation of CoSi2 on strained epitaxial Si0.8Ge0.2/Si(100) films has been studied as a function of the deposition method and annealing temperature. Two ...
in a mosaic shape and using the resultant target at the time of forming a thin film of Co silicide by sputtering. ;CONSTITUTION: High purity Co and Si are melted in vacuum and plates of a CoSi-CoSi2 eutectic alloy and a CoSi2-Si eutectic alloy shown by the phase diagram of a Co-Si...
COBALT SILICIDE SINTERED TARGET MATERIAL FOR SPUTTERING HARDLY GENERATING PARTICLES DURING FILM FORMATIONPURPOSE: To suppress the generation of sputtered particles at the time of film formation and to enable increase in the output and size of a sputtering device by dispersing a specified unreacted ...