Sally C E,Alfred B,Anderson,et al.Co-doping of Diamond with Boron and Sulfur[J].Electrochemical and Solid-State Letters,2002,5(8):G65-G68.Eaton S C,Anderson A B,Angus J C,et al.Co-doping of diamond with boron an
而近两三年 来,则是发展利用共同掺杂(co-doping)方式,改变其电导型式来成长 2 P-type 氧化锌薄膜 [3-5] 。这对於近几年来 … www.docin.com|基于4个网页 3. 掺杂法 ...的方法及特点 1)化学气相沉积法(CVD) 2)共掺杂法(co-doping) 成品率低,光电效率差 3)激光脉冲沉积法(PLD) 4)反应溅 … ...
Orita, Codoping method for the fabrication of low-resistivity wide band-gap semiconductors in p-type GaN, p-type AlN and n-type diamond: Prediction versus experiment, J. Phys.: Condens. Matter 13(40), 8901 (2001) ADS Google Scholar U. Kaufmann, P. Schlotter, H. Obloh, K. ...
Strained channel transistor device300comprises a source/drain region104disposed next to a gate structure108in a semiconductor substrate102. The source/drain region104has an anisotropic etch profile that provides for a diamond-shape or “V” shaped cavity in the semiconductor substrate102. The “V”...
Diamond films had been grown by microwave plasma-assisted CVD using acetone diluted in hydrogen. Sulfur incorporation in diamond was achieved by co-doping method using dimethyl disulfide and boron dioxide. Structural and compositional characterization of the as-grown films was carried out by scanning ...
diamond co-doped with sulfur and small quantities of boron shows n-type conductivity,which was established by Mott-Schottky analyses,thermoelectric effect,Hall measurements,scanning tunneling spectroscopy (STS) and UV open-circuit photo-potential.At higher boron (concentrations,a transition to p-type ...
A series of diamonds with boron and sulfur co-doping were synthesized in the FeNiMnCo-C system by temperature gradient growth (TGG) under high pressure and high temperature (HPHT). Because of differences in additives, the resulting diamond crystals were colorless, blue-black, or yellow. Their ...
A possible explanation for the n-type behavior created by co-doping diamond films with boron and sulfur is given in terms of thermally activated electron donation from an SVS (V is vacancy) donor to a BB acceptor band. Both lie deep in the band gap. It is proposed that electrons in the...
The tests were carried out using a Perkin Elmer-Diamond analyzer with a constant heating rate of 5 °C/min. The tem- perature was raised until it reached approximately 800 °C from the initial room temperature. The DTA curves were meticulously checked to ascertain the occurrence of a phase ...