AlGaN/GaN high electron mobility transistors (HEMTs) with polar and nonpolar ZnO nanowires modified gate exhibit significant changes in channel conductance upon expose to different concentration of carbon monoxide (CO) at room temperature. The ZnO nanowires, grown by chemical vapor deposition (CVD), ...
These observations show that many lines of sight contain (at least) two independent grain mantle components: a polar mixture (H2O-rich) responsible for the 3.08 and 6.0 micrometers ice bands and a nonpolar one dominating the solid CO spectrum. These two independent grain mantle components may ...
The preferential growth direction of Co-doped ZnO films alters from polar [0001] to non-polar lattice direction by increasing the concentration, which facilitates the transformation from 1D nanorods, assembled in straw-like structure, to 2D nanosheets with dendrite-like structure. Interestingly, room-...
Which of the following molecules has polar bonds and is nonpolar? {eq}A) HF \\ B) CO_2 \\ C) NH_3 \\ D) H_2O \\ E) BeF_2 {/eq} Polarity The polarity of the molecule can be determined with the help of the electronegativity of the element in...
The contribution of polar solvation energy is calculated with the implicit solvent model (GB or PB), whereas the nonpolar part of the solvation energy is computed from the solvent-accessible surface area (SASA) difference between the complex and its free components. Here, we used 500 snapshots ...
Particular porogens, or combinations of porogens are preferably added to tune the properties of the resulting polymer. Suitable porogens include nonpolar or hydrophobic; and polar, or hydrophilic, solvents, and combinations of nonpolar and polar solvents. In a preferred embodiment, a combination of ...
At least a first of the light emitting diode device is fabricated on a semipolar GaN containing substrate and at least a second of the light emitting diode devices is fabricated on a nonpolar GaN containing substrate. In a preferred embodiment, the two or more light emitting diode devices ...
At least a first of the light emitting diode device is fabricated on a semipolar GaN containing substrate and at least a second of the light emitting diode devices is fabricated on a nonpolar GaN containing substrate. In a preferred embodiment, the two or more light emitting diode devices ...
Dielectric relaxation spectroscopyActivation energyInterfacial polarizationPolar-nonpolar silicone materials of different morphology and composition were investigated by means of broadband dielectric relaxation spectroscopy in order to elucidate the effect of polar content and nature of the interface on the ...
The α and β peaks were observed on the nonpolar and the stepped surfaces, and the γ peak was observed on the polar surface. The α peak was assigned to adsorption on a surface Zn O pair, and the β peak was assigned to adsorption on an anion vacancy or a step. While adsorbed ...