Carbon nanotube field-effect transistor (CNTFET) is a nano scale electronics device that has excellent electrical proper to perform fast operation. In this research, a 14nm CNTFET model has been proposed to ope
The simulation is performed with Cadence Virtuoso utilizing the 32 nm CNTFET model from Stanford University.AEU - International Journal of Electronics and CommunicationsLokesh SoniNeeta Pandey
Bala, S., Khosla, M. Electrostatically doped tunnel CNTFET model for low-power VLSI circuit design.J Comput Electron17, 1528–1535 (2018). https://doi.org/10.1007/s10825-018-1240-7 December 2018 DOIhttps://doi.org/10.1007/s10825-018-1240-7 Keywords...
第五章CNTFET的半经典模型与...
iterations needed 【1 4].Consequently,the model was developed to get around t he main stumb ling block in c irc uit-c omp at ib le mode ling for C N T F E T s, su pplemented b y the fact th at accurate calculat ions for mo bile charg es inh erent ly inv ...
CNTFET Parallel in Parallel out Shift RegisterIn this paper, a compact model for carbon nanotube field effect transistor has been designed by considering various device parameters such as length, number of tubes, chiral vector etc. The modeled CNTFET is used to design various digital circuits in ...
The Flip flop is designed using Ballistic CNTFET (VHDL-AMS model) with the dcnt of 1nm in resistive load inverter logic. The transient and power analysis are obtained with operating voltage at 0.6V for the Double edge triggered D flip-flop and SISO shift register using syste...
A Verilog-A model of CNTFET operates near-threshold region≈0.35V and shows a power consumption of 5.7 pW, which needs 6.97 ps to write into the cell and 4.08 ns to read from the cell. N-curve analysis has been performed to find various stability factors. As compared to conventional CMOS...
The proposed ternary circuits have been simulated using the Stanford University 32 nm CNTFET model file [28] and the Stanford University RRAM model [29]. Some of the important parameters listed in the RRAM model file are summarised in Table 8 [29]. Table 8. Stanford University RRAM model key...
Transport model The energy dispersion of the nanotube can be obtained using numerical tight-binding calculation including tube curvature effects and the influence of mixing of σ and π carbon orbitals, which becomes very important for low diameter tubes. The unit cell of a zigzag CNT (n,0) con...