Advanced Radiation Sensors VLSI Design in CMOS Technology for High Energy Physics ApplicationsActive Pixel SensorCMOSRadiation sensorHigh energy physics applicationsIn this paper we discuss some issues related to the design, implementation and test of a CMOS Active Pixel Sensor. Two different pixel ...
CMOS VLSI Engineering: Silicon-On-Insulator addresses three key factors in engineering SOI CMOS VLSI - processing technology, device modelling, and circuit designs are all covered with their mutual interactions. Starting from the SOI CMOS processing technology and the SOI CMOS digital and analog circui...
The recent evolution in CMOS as the emerging very-large-scale-integrated (VLSI) circuit technology is reviewed. Various CMOS technologies and their impact on circuit performance and reliability are discussed and compared in generic and special circuit applications. Key issues in CMOS scaling, such as...
PPAC targets at each technology node have to be at an appropriate tradeoff. Relying on DTCO to optimize the semiconductor processing and circuit design is playing an increasingly important role in the advanced nodes. In the future, system technology co-...
CMOS VLSI Engineering: Silicon-On-Insulator addresses three key factors in engineering SOI CMOS VLSI - processing technology, device modelling, and circuit designs are all covered with their mutual interactions. Starting from the SOI CMOS processing technology and the SOI CMOS digital and analog circui...
The manufacture of n-channel and p-channel transistors in a CMOS process which involves employing gate spacer oxide layers for of reducing the under-diffusion of the implanted source-drain regions under the gate areas. The spacer oxide widths for the n-channel and the p-channel transistor are ...
The development of a n-well HCMOS technology is described and the critical process parameters are defined. High speed with low power dissipation performance have been demonstrated. For effective channel lengths larger than 2 µm, operation with voltages greater 10 V is possible....
CMOS devices and technology for VLSI The physical principles, design, fabrication, and applications of CMOS semiconductor devices are discussed in an introduction for senior undergraduate or g... JY Chen - Prentice Hall 被引量: 146发表: 1990年 CMOS VLSI Design:A Circuits and Systems Perspective:...
After layout and post-simulation, the ASIC has been implemented on a 2.2 mm times 2.2 mm silicon chip die and fabricated by using MOSIS AMI 1.5 mum mixed- signal CMOS process technology available through MOSIS. 展开 关键词: CMOS image sensors VLSI application specific integrated circuits carbon ...
integrated circuit technologysemiconductor device modelsVLSI/ CMOS/VLSI technologiesMOS device lateral dimensionsscalingcomputer modellingsource/drain junctions/ B2560B Semiconductor device modelling and equivalent circuits B2570D CMOS integrated circuits