The method for manufacturing a CMOS image sensor is employed to enhance an optical property and an electrical property structuring a double gate insulator in a pixel array and a single gate insulator in a logic circuit. The method includ... Lee, Ju-il - US 被引量: 17发表: 2004年 Reflecti...
We report on gate-last technology for improved effective work function tuning with 200meV higher p-EWF at 7 EOT, 2x higher fmax performance, and further options for channel stress enhancement than with gate-first by taking advantage of the intrinsic stress of metals and gate height dependence. ...
In the new proposed clock gating, the gated clock generating circuit uses tri-state buffer in negative latch circuit instead of OR gate logic. With the same function being performed, this circuit saves more power and area irrespective of design performance. The proposed design is implemented by ...
Integrated circuit structure with at least a CMOS NAND gate and method of fabricating the same. not available for EP065793of corresponding document:A first MOS transistor and a second MOS transistor are connected in series with a first complementary M... FDP Hofmann,K Hofmann,L Risch,... -...
Comparison of the absolute maximum rated output current Iout and DC Vcc current/ground current ICC/IGND among typical ICs of different CMOS logic series Typical products used in the table CMOS logic ICs : 74xx244 One-gate logic ICs : TC7S00, TC7PZ34, TC7xx125 for the other series ...
CMOS transistors were fabricated using a single metal, [110]-Mo, as the gate material. [110]-Mo shows a high work function value that is suitable for PMOSFETs, and, with nitrogen implantation, its work function can be reduced to meet the requirements of NMOSFETs. The change in Mo work ...
Beyond-CMOS devices concepts are greatly dependent on new functional materials to provide inspiration and innovation beyond the silicon status quo. Here, we propose a material framework specifically for beyond-CMOS devices. In doing so, material system examples and data points presented are taken from...
N) dB. 控制可拼接技术 (图9(b)): 在控制层面采用分布式波控解算架构, 开机初始化时天线控制单元 (ACU) 将坐标信息下发到每一个天线子阵, 之后只需要下发俯仰角和方位角信息, 天线子阵通过现场可编程逻辑门阵列 (field programmable gate array, FPGA), 快速解算出每个阵元的幅相值, 并发送到每个 CMOS ...
For the 28 nm CMOS process, the n-type metal–oxide–semiconductor (NMOS) transistor transition frequency (ft) could reach 270 GHz, with the gate (VG) and drain (VD) biased at 0.7–0.8 V. Similarly, the bandwidth of a very short length of the modulator (in the depletion ...
Among these technologies, gate stack technology is common key issue for scaled CMOS devices. In this presentation, gate stack technology using high-k gate dielectrics and metal gate will be discussed, and recent achievements of these technologies will be reviewed 展开 ...