化学物理学报Song Wu Bo Tao Yong-ping Shen Qi WangDepartmentWu S,Tao B,Shen YP.Chemical vapor deposition mechanism of copper film on silicon substrates. Chinese Journal of Chemical Physics . 2006
Chemical vapor deposition, otherwise known as (CVD) is a technique for the deposition of metallic, ceramic, and semiconducting thin films by depositing solid on to a heated surface by a chemical reaction from the vapor or gas phase.
Growth of Single-Walled Carbon Nanotubes from Ceramic Particles by Alcohol Chemical Vapor Deposition Al2O3 ceramic nano-particles, which were regarded as an inactive catalyst in the growth of carbon nanotubes in the past, have been prepared as the catalyst... H Liu,D Takagi,H Ohno,... - ...
chemical vapour deposition
Chemical vapor deposition growth of monolayer WSe2 with tunable device characteristics and growth mechanism study. ACS Nano 9, 6119–6127 (2015). Article Google Scholar Li, S. et al. Halide-assisted atmospheric pressure growth of large WSe2 and WS2 monolayer crystals. Appl. Mater. Today 1, ...
These findings support a mechanism whereby absorption of light by the surface creates hot electrons which induce desorption of the TIBA molecules, rupture isobutyl groups to create methyl radicals, and induce 尾-hydride elimination reactionsdoi:10.1080/00268949108041161...
Studies of the gas‐phase products, silicon dioxide film properties, and kinetics of the diethylsilane/oxygen reaction under low pressure chemical vapor deposition (LPCVD), conditions in both packed and unpacked stirred flow reactors are reported. Effects of flow rate, reactant composition, pressure,...
Such processes typically differ in the mechanism by which chemical reactions are triggered [22]. The operating conditions are: • Atmospheric pressure CVD (APCVD): CVD at atmospheric pressure. • Low-pressure CVD(LPCVD): CVD under subatmospheric pressure. • Ultrahigh CVD vacuum: low pressure...
The growth of graphene on Cu substrates by plasma enhanced chemical vapor deposition (PE-CVD) was investigated and its growth mechanism was discussed. At a... TO Terasawa,K Saiki - 《Carbon》 被引量: 124发表: 2012年 Structure/property/process relationships in chemical vapor deposition CVD Altho...
The invention provides a loading and unloading mechanism, chemical vapor deposition (CVD) equipment with the loading and unloading mechanism and a control method of the CVD equipment. The loading and unloading mechanism comprises a first rack, a first bracket, a first rotating mechanism, a second ...