Charge-Trapping Non-Volatile MemoriesMaterials ScienceVolume 1 – Basic and Advanced Devicesdoi:10.1007/978-3-319-15290-5DimitrakisPanagiotisSpringer International PublishingDimitrakis P. Charge-trapping non-volatile memories. Basic and advanced devices, vol. 1. Springer; 2015....
Provided is a charge trapping nonvolatile memory device. The charge trapping nonvolatile memory device includes: an active pattern and a gate electrode, spaced apart from each other
(ONO)gatedielectricstack,is]as gatestructuresandarebecomingmoreattractivefor shown inFig.1fa1.Thechargecanbestoredinthe non—volatilememoriesfNVMs1.Shallow trenchiso— nitridelayerabovethechanne1.Eachcel1canreal— lationfSTI)hasbeenwidelyusedinNVMstoiso— izetwoseparatephysicalstoragebits.Programming late...
The present invention relates to a memory cell of a non-volatile memory, and more particularly to a memory cell of a charge-trapping non-volatile memory and a gate structure of the memory cell. BACKGROUND OF THE INVENTION Non-volatile memories have been widely used in a variety of electronic...
tiltattheactiveareaedgeasanewsolution£0solvethisproblemisdeveloped.PACS:72.80.Cw,73.40.qv,73.50.LwDOI:10.1088/0256—307x/27/6/067201Nowadays,polysilicon—oxide—nitride-oxide—silicon(S0NOS)structuresarereplacingtraditionalfloatinggatestructuresandarebecomingmoreattractivefornon—volatilememoriesfNVMs1.Shallow...
It is also employed as charge storage in nonvolatile memory devices thanks to its high concentration of charge traps. However, in the case of memories,... WS Patrocinio,MR Jr,LRC Fonseca - 《Materials Science & Engineering B》 被引量: 4发表: 2012年 Vertical stack array of one-time progra...
Simulation of Retention Characteristics in Double-Gate Structure Multi-bit SONOS Flash Memory(Session4A: Nonvolatile Memory) This paper presents a detailed study of the retention characteristics in scaled multi-bit SONOS flash memories. By calculating the oxide field and tunnelin... K Doo-Hyun,PI ...
In this letter, a silicon-oxide-high-k-oxide-silicon memory structure using a high-k Y2O3 film as the charge trapping layer is reported for nonvolatile memory application. From x-ray photoelectron spectroscopic analysis, we found that the Y2O3 layer formed after annealing at 700 °C for 30 ...
Charge storage behaviors of Ge nanocrystals embedded in SiO2 for the application in non-volatile memory devices. Ge nanocrystals distributed in the SiO2 of metal-oxide-semiconductor structure are synthesized by low-energy Ge ion implantation with various energies and ... M Yang,TP Chen,JI Wong,....
lm stack of TaN, Al2O3, Si3N4, SiO2, Si (TANOS) charge-trapping ?ash (CTF) memory with an existing complementary metal-oxidesemiconductor process ?ow. Fabricated capacitance-voltage devices with T-A-N-O thicknesses of 2500?A, 110?A, 75?A, and 30? A respectively show characteristic ...