1) charge trapping effect 电荷俘获效应1. The charge trapping effect of Al/SRO/Si MOS devices under lateral electrical stress is investigated. 利用Al/ SRO/ Si MOS,对富硅二氧化硅 (SRO)材料在横向电压作用下的电荷俘获效应进行了研究 。2) trapping electron effect 俘获电子效应 ...
Chen, D. Ma, Charge-trapping effect of doped fluorescent dye on the electroluminescent processes and its performance in polymer light- emitting diodes, Mater. Sci. Eng. B 175 (2010) 75e80.Ye T, Chen Z, Chen J, Ma D. Charge-trapping effect of doped fluorescent dye on the ...
The observed effect is attributed to discharging into the metal conduction band of the near interface traps with energy levels higher than the Au Fermi level at zero voltage and charging with electrons injected into the insulator during current injection. The traps are attributed to the cap type ...
NUCLEAR INSTRUMENTS AND METHODS 86 (197o) 245-252, ,~ NORtH-HOLLAND PUBLISHING CO THE EFFECT OF CHARGE TRAPPING ON THE SPECTROMETER PERFORMANCE OF p-i-n SEMICONDUCTOR DETECTORS T A M{MATH and M MARTINI* Ph~slcs Dtt'tston, Chall~ Rtler Nuclear Laboratories, 4tamtc Energt of Canada Lmuted...
Analysis of effect of HgCdTe passivant on the performance of long-wavelength infrared(LWIR) detectors The performance of HgCdTe infrared photoconductors is strongly dependent on the semiconductor surface conditions. In this paper, the effect of fixed charge... PX Xu,KF Zhang,W Wei,... - 《Proc...
Effect of surface charge trapping on dielectric barrier discharge The experiment of dielectric barrier discharge in a 2 mm air gap shows that the pressure range of a uniform discharge using polytetrafluoroethylene as barr... Li M,Li CR,Zhan HM,... - 《Applied Physics Letters》 被引量: 0...
Effect of Charge Trapping on the Asymmetrical Shift of Memory Window in MFIS DevicesNonvolatile MemoryMfisSbnY 2 O 3Charge TrappingWe investigated the effects of charge trapping on the asymmetrical increase of the memory window in metal-ferroelectric-insulator-semiconductor (MFIS) devices. We suggest...
Trapping effect was found to be enhanced for the outer polymer coating in the reduced state and for high electrolyte concentrations. The outer film was also found to prevent the inner coating from irreversible oxidation at positive potentials....
The trap-energy-level shift due to the polaron effect is found to be critical to model the pulse-height dependence of the threshold-voltage shift. 机译:作者开发了一种分布式隧穿模型,以研究使用高k栅极电介质材料的场效应晶体管(FET)中的电荷俘获引起的阈值电压不稳定性。高k层中的电荷俘获动力学是...
(herein after refer to as prior art [1]), continuous down-scaling the [poly-Si or metal]-oxide-Si3N4-oxide-semiconductor [SONOS or MONOS] non-volatile memory (NVM) (herein after refer to as prior art [2]-[4]) is required to suppress the unwanted short channel effect and leakage ...