One way is the charge pumping method, which is a measurement technique that can evaluate the surface-states at the Si-SiO2 interface of MOSFET devices. This application note gives an example of evaluating the interface-states by using the Agilent 4155C/4156C to perform pumping method. Three ...
IntroductionAs device features get smaller, hotcarrier induced degradation of MOSFET devices is likely to occur. To make more reliable ULSI devices,it is critical to understand this degra-dation mechanism. One way is thecharge pumping method, which is a measurement technique that canevaluate the s...
Charge Pumping Measurement for Determing Band-to-Band-Tunneling Induced Interface Damage During Erasing Operation of FLASH电荷泵法研究FLASH擦工作时带带隧穿引起的界面损伤A charge pumping method is proposed for the m easurem ent of hole- induced interface states and trapped charges due to band- to...
A measuring technique based on the CP(charge pumping)method for hot-carrier degradation measurement of high voltage N-LDMOS is researched in depth.The impact of the special configuration on the CP spectrum and the gate voltage pulse frequency range which is suitable for high voltage N-LDMOS in ...
A simple front-gate charge pumping technique has been developed, which enables the measurement of interface traps at both the front and the back interfaces... Y Li,Ma, T.-P - 《IEEE Transactions on Electron Devices》 被引量: 19发表: 1998年 A front-gate charge-pumping method for probing ...
thusvoltageresolutionbecomesofimportance.2.Charge-pumpingCharge-pumpingiswidelyusedtocharacterizeinterfacetrapsinMOSdevices.Itconsistsinmeasuringsub-strateDCcurrentinducedbyrepeatedswitchingofaMOStransistorbetweenstronginversionandaccumulationasshowninFig.1.Themaincomponentofthemeasurementset-upissignalgenerator.Themaintask...
At present, in the real-time charging application scenario of electric vehicles, many charging companies are facing complex payment agreements, non-uniform payment methods, relatively scarce charging piles, and inaccurate charging cost measurement. Blockchain provides technical solutions to solve these ...
A simple method of unambiguously determining the presence of any geometric component in a charge-pumping measurement by collecting this component at another node via a nearby junction is presented. With the method it has been possible to study the dependence of geometric components on device dimension...
A method for analyzing the electron capture process in the charge pumping (CP) sequence is proposed and demonstrated. The method monitors the electron current in the CP sequence in time domain. This time-domain measurements enable us to directly access the process of the electron capture to the...
A simple new method based on the measurement of charge pumping technique is proposed to separate and quantify experimentally the effects of oxide-trapped charges and interface-trapped charges on threshold voltage degradation in p-channel metal-oxide-semi