IntroductionAs device features get smaller, hotcarrier induced degradation of MOSFET devices is likely to occur. To make more reliable ULSI devices,it is critical to understand this degra-dation mechanism. One way is thecharge pumping method, which is a measurement technique that canevaluate the s...
perform pumping method. Three Methods of Charge Pumping Charge pumping is one of the meas- urement methods that extracts Si-SiO2 interface-state density and captures cross section of MOSFET devices. Figure 1 shows the measurement circuit diagram of charge pumping. The gate of MOSFET is connected...
Mechanisms by ultrafast charge pumping measurementAvenue, Nanyang
Figure 1. Basic charge pumping measurement circuit V G I CP V BASE Depletion Inversion Accum. V BASE V threshold V FlatBand Figure 2. Pulse waveform for fxed-amplitude/voltage-base sweep and corresponding charge pumping current curve The fixed-base/variable-amplitude sweep method is another ...
A measuring technique based on the CP (charge pumping) method for hot-carrier degradation measurement of high voltage N-LDMOS is researched in depth. The impact of the special configuration on the CP spectrum and the gate voltage pulse frequency range which is suitable for high voltage N-LDMOS...
A measuring technique based on the CP(charge pumping)method for hot-carrier degradation measurement of high voltage N-LDMOS is researched in depth.The impact of the special configuration on the CP spectrum and the gate voltage pulse frequency range which is suitable for high voltage N-LDMOS in ...
Although it is a simple method to erase the body-effect, the substrate leakage current may degrade the efficiency of the charge pump circuit [52]. Thus, adoptive body biasing circuits which eliminate the body-effect of a transistor by always connecting its body to the highest/lowest voltage (...
As such, these defects do not return to their pre-stress occupancy within a reasonable measurement time when the stress is removed and appear as a permanent component [35], [21], [22], [33], [36], [37], [38], [39], [34]. Unfortunately, the microscopic nature of this permanent ...
Performance of triboelectric nanogenerators is limited by low and unstable charge density on tribo-layers. An external-charge pumping method was recently developed and presents a promising and efficient strategy towards high-output triboelectric nanogene
An accurate charge pumping technique,namely low frequency local CP measurement,is used to characterize the resultant edge damage. 文中讨论了等离子体边缘损伤与圆片位置关系、天线比之间的关系及它们对器件长期可靠性的影响 ,并使用了低频局部电荷泵技术 。 更多例句>> 6) pullpush charge pump pullpush电荷...