CONSTITUTION:A reverse current is made to start flowing at a time t1 between an anode A and a cathode K of a diode D to be measured and is let to flow till a time t2. The reverse current is set at a sufficiently large value, and the reverse current of a value IR2 is let to ...
semiconductor-metal boundaries/ diode characteristicsedge effectsbarrier heightorigin of current componentsinfluence of guard ringsmetal semiconductor diodesI-V characteristics/ B2560H Junction and barrier diodesWhen investigating metal-semiconductor barriers, measured I– V-characteristics are often used for ...
Diode Functionality We call the lead affixed to the N-type semiconductor the cathode. Therefore, the cathode is the negative side of a diode. In contrast, we call the lead connected to the P-type semiconductor the anode, which makes it the positive side of a diode. ...
We propose a novel negative differential resistance (NDR) device with ultra-high peak-to-valley current ratio (PVCR) by combining pn junction diode with de... S Shin,IM Kang,KR Kim - 《Journal of Semiconductor Technology & Science》 被引量: 3发表: 2013年 Magnetic field cycling effect on...
(C-V) characteris-tics of organic semiconductor devices.Derivatives of I-V and V-t,dI/dV and dV/dt,are related with C by a simple formula C=-V(dI/dV)/(dV/dt)The validity of the method is confirmed by experimental data measured from a set of single-organic-layer devices with ...
Diode Characteristics - There are diverse current scales for forward bias and reverse bias operations. The forward portion of the curve indicates that the diode conducts simply when the P-region is made positive and the N-region negative.
Method and the system for measuring thermal resistance and optical radiation intensity of the LED power diode for measuring the thermal resistance and power of the optical LED power,applicable for the quality control of semiconductor devices for the electronic ... K Grecki,P Ptak 被引量: 0发表:...
Determination of barrier height of ternary alloy semiconductor diode from T-V and C-V measurements showed that it was alloy composition dependent and lay between alloy component semiconductor barrier height values.doi:10.1080/00207218308938732R.
Method for altering an electrical characteristic of a circuit having at least one active semiconductor device involves applying at least one pulse--a voltage pulse, a current pulse, an energy pulse, o
The conversion efficiency and output power obtained with wide bandgap semiconductor 4H-SiC based Impatt diode are 16.4 % and 35.104 W respectively at an optimum bias current density of 5x 108 A/m2 thus indicating its superiority over other Impatts. The design results presented in this paper are...