V-I Characteristics of BJT The VI characteristics of a power BJT differ from those of a signal-level transistor. The main distinctions are the quasi-saturation region and the secondary breakdown region. The device operation at the primary and secondary breakdown regions should be avoided because it...
In Common Emitter Amplifier Configuration, the Emitter of a BJT is common to both the input and output signal as shown below. The arrangement is the same for aPNP transistor, but bias will be opposite w.r.t NPN transistor. CE Amplifier Configurations Operation of Common Emitter Amplifier When...