Chalcogenide-Based Materials for Application in Electronic MemoryBerkeley Electronic Press Selected WorksK. Campbell
Jennifer E. GerbiMarc G. LangloisRobert T. NilssonUS20110226336 * Sep 22, 2011 Gerbi Jennifer E Chalcogenide-based materials and improved methods of making such materialsUS20110226336 * Mar 14, 2011 Sep 22, 2011 Gerbi Jennifer E Chalcogenide-based materials and improved methods of making such ...
Chalcogenide-Based Nanomaterials as Photocatalysts deals with the different types of chalcogenide-based photocatalytic reactions, covering the fundamental concepts of photocatalyti...read full description Purchase book Share this book Table of contents ...
Interrupted chalcogenide-based zeolite-analogue semiconductor: atomically precise doping for tun- able electro-/photoelectrochemical properties. Angew. Chem., Int. Ed. 2015, 54, 5103- 5107.Lin, J.; Dong, Y.; Zhang, Q.; Hu, D.; Li, N.; Wang, L.; Liu, Y.; Wu, T. Interrupted ...
Two-dimensional (2D) transition metal oxide and chalcogenide (TMO&C)-based photocatalysts have recently attracted significant attention for address
These chalcogenide materials can play the role of an active photocatalyst to boost the solar energy harvest. The major variants of TMC-based catalysts are heterogeneous, which offer a broad range of chemical reactivities. The different lattice structures of TMC are one of the primary reasons behind...
chalcogenide double perovskitesoptical propertiesIn this work, we delve into the investigation of the structural, electronic, and optical properties of Ba2NbBiS6and Ba2TaSbS6chalcogenide-based double perovskites, which are structured in the cubic space groupFm3mform. We have performed first-principles...
ChemInform Abstract: Oxygen Reduction on Chalcogenide-Based Cluster Materialsinorganic chemistry, reviewheterogeneous catalysis, catalystspolarization, electrode processes, photoelectrochemistryReview: 132 refs.doi:10.1002/chin.201133216Cyril DelacoteYongjun Feng...
Recently discovered atomically thin GeSe, a group IV mono-chalcogenide, can be a potential candidate owing to its direct electronic band gap and low carrier effective mass. In this work we employ ballistic quantum transport model to assess the intrinsic performance limit of monolayer GeSe-TFET. We...
Aryana, K., Gaskins, J.T., Nag, J.et al.Interface controlled thermal resistances of ultra-thin chalcogenide-based phase change memory devices.Nat Commun12, 774 (2021). https://doi.org/10.1038/s41467-020-20661-8 Download citation