Only the data acquired with a syringe headspace technique in the Congo are presented ohctwrhfeaitrr2thoei0o.m amnSaassLtmaoitnogupfrrlteaaNhsptee2hfdoytAhrsm(atoGhtlaueCwztod)iao5nse4nt.aewTlorlemhofrweHeineCgmadCHteitloa4o2nsp(ue1aoqr0refut0dCii laμiHwlb Lrp4i)at,rhatewens...
Morgenstern3 & R. Aravena4 Using a comprehensive data set (dissolved CH4, δ13C-CH4, δ2H-CH4, δ13C-DIC, δ37Cl, δ2H-H2O, δ18O-H2O, Na, K, Ca, Mg, HCO3, Cl, Br, SO4, NO3 and DO), in combination with a novel application of isometric log ratios, this study ...
1、探究双金属单原子催化剂Ni与Ru在CH4的干重整中的协同效应IAC/、WL.Ln631TM;JIEIFMe发电川r犀»?加|Ok.kNM.iS-FTHEam陛11甩“HFbllCMER门EF¥SynergyofSingIe-AtomNiqandRu1SitesonCeO2forDryReformingofCH4YuTan&,1,jL|;YuechiiipWe/'ZiyuntVang/'_ShiranZEung,YutmLiJLuanNguyen,Yiiiani,-YanZhou...
工艺条件:CF4O2=101 板流:0.350.4A 板压:1.52KV 压强:80120Pa 刻蚀时间:1016min质量目标;刻边电阻大于5K,刻边宽度12mm间。刻蚀过程的主要反应 放电过程e-+CF4CF3+F+2e e-+CF4CF3+F+e-e-+CF3CF 41、2+F+e- O2+e-2O+e- 腐蚀过程Si+4FSiF4 3Si+4CF34C+3SiF42C+3OCO+CO2工序四工序四....