a method useful for modeling of mitochondrial genetic disorders and developing novel therapeutic modalities. Here, we report that A-to-G-editing TALEDs but not C-to-T-editing DdCBEs induce
该研究成果以“Integrating 3T-DRAM into 1T Layout with Substrate Bipolar Effect Using 22 nm FDSOI Technology”为题发表于微电子器件领域旗舰期刊 IEEE Electron Device Letters。 原文链接: 生命医学领域 1. 生命科学学院于肖飞教授团队揭示IL-22介导的脑肠轴可减轻精神压力对机体的影响 IL-1β-TH17-IL-22通路...
The rectifying curves signify the heterojunction between the p-type a-C film and the n-Si substrate and designate the generation of electron-hole pair ... N Ahmad,D Kamaruzzaman,M Rusop - 《Japanese Journal of Applied Physics》 被引量: 2发表: 2012年 Single-junction solar cells based on ...
junction lc-Si:H cell fabricated on a periodically textured substrate with a high-mobility front transparent contacting layer. These technologies were also combined into a-Si:H/lc-Si:H/lc-Si:H triple-junction cells, and a world record stabilized efficiency of 13.6% was achieved. V ...
A monolithic multi-junction (tandem) photo-voltaic (PV) device includes one or more PV subcells epitaxially formed on a compliant silicon substrate (). The compliant silicon substrate () includes a base silicon layer (), a conductive perovskite layer (), and an oxide layer () interposed betw...
(2) inside metal layer to the the Texture substrate and high reflectivity to light to capture the effect, increase the degree of light absorption layer ι. (3) combined with the more narrow than the a-Si Band Gap materials to form a laminate structure. 圖4-50 The high efficiency of a ...
通过这种特殊的器件设计,BIS-DRAM在单晶体管布局上实现了3T-DRAM的功能,相比3T-DRAM存储密度提高10倍以上。该研究成果以“Integrating 3T-DRAM into 1T Layout with Substrate Bipolar Effect Using 22 nm FDSOI Technology”为题发表于微电子器件领域旗舰期刊 IEEE Electron Device Letters。
通过这种特殊的器件设计,BIS-DRAM在单晶体管布局上实现了3T-DRAM的功能,相比3T-DRAM存储密度提高10倍以上。该研究成果以“Integrating 3T-DRAM into 1T Layout with Substrate Bipolar Effect Using 22 nm FDSOI Technology”为题发表于微电子器件领域旗舰期刊 IEEE Electron Device Letters。