Gate sizingCell selectionVLSITiming-constrained power-driven gate sizing has aroused lot of research interest after the recent discrete gate sizing contests organized by International Symposium on Physical Design. Since then, there are plenty of research papers published and new algorithms are proposed ...
Discrete Gate Sizing Methodologies for Delay, Area and Power Optimization a new timing model, which is derived from the classic Elmore delay model, but takes the features of modern timing models from standard cell library. Wit... J Xie - Dissertations & Theses - Gradworks 被引量: 1发表: 201...
A dynamic threshold voltage control strategy is presented in this paper to minimize leakage power while enhancing the speed and stability. The threshold voltage of driver and access transistor are tuned dynamically through a novel body-bias controller circuit. The word line signal level controls the ...
The design steps required for proper sizing of the bit cell is also explained in detail. Monte Carlo simulations are done for calculating the six sigma variation of the different stability parameters. The simulations are done in ELDO Spice and the process technology used is 65nm CMOS process. ...
Analysis and Asymmetric Sizing of CMOS Circuits for Increased Transient Error Tolerance The RHBF approach includes methods such as substrate engineering, silicon on insulator (SOI), deep-trench isolation, and guard ring oscillators. The RHBF... M Nisar,I Barlas,M Roemer - Aiaa Infotech 被引量:...
例如,在我们确定了晶体管连接关系后,则需求确定每个晶体管的尺寸(Transistor Sizing),从而确定晶体管的驱动能力与延时。如图13所示,尺寸的定义通常是W/L的比值,通常对于某个工艺条件,L是固定的,因此主要调整W,如果小伙伴也淡忘了这部分数字电路的内容,可以参考马里兰大学的这个课件[16](主要为22-29页)。这是需要...
Asymmetric sizing in a 45nm 5T SRAM to improve read stability over 6T. In Proceedings of IEEE Custom Integrated Circuits Conference, San Jose, CA, USA, 13-16 September 2009; pp. 709–712. [18] Vitale, S.A.; Wyatt, P.W.; Checka, N.; Kedzierski, J.; Keast, C.L. FDSOI ...
6T SRAM Cell 分析与设计
4. This shows that for a stable SRAM cell operating at a lower supply voltage, a feedback mechanism can be more effective than simple transistor upsizing as in a conventional 6T cell. .. 5.2 Read failure probability Supply voltage is reduced gradually from the nominal value of 1.2V to ...
digitalcircuitryinmixed-mode verylarge-scaleintegration(VLSI)systemsandtoprevent oxidebreakdownwithdecreasinggate-oxidethickness.In addition,lowpowerconsumptionandlowsupplyvoltagesare requirementsoftheportableelectronicequipmentmarket.Sev- eraltechniqueshavebeenproposedtoreducesupplyvoltage requirementsinanalogandmixed-...