必应词典为您提供carbon-oxygen-equilibrium的释义,网络释义: 碳一氧平衡;碳氧积;
W. Bis(pentamethylcyclopentadienyl)actinide alkyls: facile activation of carbon monoxide, carbon–carbon double bond formation, and the production of unusual oxygen-bonded migratory insertion products. J. Am. Chem. Soc. 100, 7112–7114 (1978). Not only the first example of CO insertion into an ...
1.Humanstakeinoxygenandbreatheoutcarbondioxide.人吸入氧气，呼出二氧化碳。2.Alllifedependsultimatelyonoxygen.一切生命归根到底都要依赖氧气。3.Hydrogenandoxygencombinetoformwater.氢与氧化合成水。
carbon-oxygen-isotope 例句 释义: 全部 更多例句筛选 1. The change of carbon-oxygen isotope composition is very big and negative number in low stand system tracts. 低水位体系域碳、氧同位素组成变化剧烈,且均为负值。 210.77.64.204:8080© 2025 Microsoft 隐私声明和 Cookie 法律声明 广告 帮助 反馈...
An aluminum matrix composite containing evenly dispersed reinforcement particles in the aluminum matrix wherein the contents of oxygen and carbon are controlled so that their volume percentage is not larger than 20% and wherein the contents of the reinforcement particles, oxygen and carbon are controll...
The chemisorption of oxygen on outgassed Spherocarb has been studied over a wide range of conditions (temperatures from 420 to 920 K, oxygen partial pressures from 102 to 8×104 Pa, and exposure times from 1 to 900 min) in order to investigate the relationship between the formation of ...
The spectrum can be well represented by a combination of common elements seen in supernovae (oxygen, sodium, magnesium, calcium and iron); the addition of neon, which is unique to this object, seems to improve the fit substantially around 6,200–7,000 Å (yellow). We compare models wit...
Ligand Controlled Carbon-Carbon Bond Formation versus Carbon-Oxygen Bond Cleavage in the Nickel-Catalyzed Electrochemical Reduction of Allyl o-Halophenyl E... The electrochemical reactivity of ORTHO-allyloxy halobenzenes in the presence of Ni(II) complexes as catalysts is determined by the nature of...
An ab initio local density functional cluster method, AIMPRO, is used to examine a variety of oxygen related point defects in silicon. In particular results are given for X-O n complexes where X is interstitial C, N or O. For n = 2, the first defect, C-O 2 has been assigned to ...