The capacitance−voltage curve in Figure 青云英语翻译 请在下面的文本框内输入文字,然后点击开始翻译按钮进行翻译,如果您看不到结果,请重新翻译! 翻译结果1翻译结果2翻译结果3翻译结果4翻译结果5 翻译结果1复制译文编辑译文朗读译文返回顶部 在图中,电容 - 电压曲线...
Results demonstrate that the capacitance-voltage curve of a high-K MOS structure compared to that of SiO2 MOS structure with the same equivalent oxide thickness shifts to lower gate voltage with increasing dielectric constant of the gate dielectric, thickness of gate dielectric, and acceptor density ...
求翻译:Capacitance voltage change curve是什么意思?待解决 悬赏分:1 - 离问题结束还有 Capacitance voltage change curve问题补充:匿名 2013-05-23 12:21:38 电容电压变化曲线 匿名 2013-05-23 12:23:18 电容电压变动曲线 匿名 2013-05-23 12:24:58 电容电压变动曲线 匿名 2013-05-23 12:26:3...
The ultra-thin oxide (1-3nm) will be used in MOS technology that we have to find new method or model instead of the using time-consuming simulation to extract the real C-V curve due to the quantum mechanical effect without take tunneling into account. The quantum mechanical effect result ...
Curve 1 is measured in air, after the relative long (2 days) storage of the structure at normal conditions. Curve 2 shows the same dependence after the evacuation of air from cryostat, i.e., at pressure 10−4 Torr. Curve 3 is carried out after the filling of the cryostat with ...
the voltage is negative enough that the capacitance is essentially constant and the C-V curve slope is essentially flat. There, the oxide thickness can be extracted from the oxide capacitance. However, the C-V curve for a very thin oxide often does not “saturate” to a flat slo...
We have studied the effect of thermal bake history of MPOS (Cu-fluorinated polyimide-SiO 2 –Si) capacitor on the deviations from ideality, such as shifts or distortions, in the capacitance–voltage (C–V) curve characteristics. The dielectric constant was calculated to be 2.4 for the ...
MOS Capacitance-Voltage Characteristics II. Sensitivity of Electronic Trapping at Dopant Impurity from Parameter Variations.pdf 2015-04-18上传 MOS Capacitance-Voltage Characteristics II. Sensitivity of Electronic Trapping at Dopant Impurity from Parameter Variations ...
2 and 3 show a bell shape curve where the capacitance attains a maximum value, and it is more pronounced at 100 kHz-fre- quency and at temperatures close to amorphous–crystalline transition temperature (TC). However, a negative capaci- tance (NC) is observed for sample S2 at 100 kHz-...
The main conclusion of the work is that the area under the C(V) curve is a key parameter for the optimization of conversion efficiency. This result is interpreted on the basis of soliton like propagation in NLTLs.关键词: Theoretical or Mathematical/ capacitance digital simulation frequency ...