结合紫外光电子能谱(UPS),X射线光电子能谱(XPS)和原子力显微镜(AFM)等实验手段系统研究了C8-BTBT沉积在层状Mo S2基底上的界面能级匹配,薄膜生长和分子取向.研究发现C8-BTBT分子竖直生长在Mo S2上,生长过程中界面的真空能级(VL),高占据态轨道(HOMO)和电离能(IP)都出现了非常规的弯曲现象.这种能级弯曲行为可归因...
摘要: 结合紫外光电子能谱(UPS)、X 射线光电子能谱(XPS) 和原子力显微镜(AFM)等实验手段系统研究 了C8 BTBT 沉积在层状MoS 2 基底上的界面能级匹配、薄膜生长和分子取向。 研究发现C8 BTBT 分子竖直生 长在MoS 2 上,生长过程中界面的真空能级(VL)、最高占据态轨道(HOMO)和电离能(IP)都出现了非常规的 弯...
UPS and XPS measurements revealed that a chemical reaction might be generated at the adjacent interface and a small amount of lead sulfite was observed. C8-BTBT can modulate the energy band of CsPbBr3 film, which is conducive to the tendency of electron-hole pair separation, thus can improve ...
The transport barriers of holes and electrons at the interface are 1.72eV and 2.12eV, respectively, from the UPS measurement. There is no chemical reaction of C8-BTBT with Au from the XPS investigation of core levels Au 4f , C 1s and S 2p . The upmost molecules adopt a standing up ...