Jie He, Bo Han, Chensheng Xian, Zhao Hu, Tingfeng Fang, Zehui Zhang, Hydrogen-Bond-Mediated Formation of C-N or C=N Bond during Photocatalytic Reductive Coupling Reaction over CdS Nanosheets, Angewandte Chemie Inter...
Sidewall functionalization of single-wall carbon nanotubes through C-N bond forming substitutions of fluoronanotubes. Khabashesku V N,Stevens J L,Derrien G A. US7452519 . 2008V. N. Khabashesku, M. L. Margrave, J. L. Stevens et al., "Side wall functionalization of single-wall carbon ...
邹雨芹/王双印团队开发出e-ODCu电催化剂实现了乌洛托品的高效电催化合成。采用原位SR-FTIR和原位XAS解析出在e-OD-Cu上的偶联反应途径是串联的“电化学−化学”过程,且在整个偶联反应过程中都存在Cu空位。进一步利用DFT计算和OCP测试证实了Cu空位增强了硝酸盐和甲醛的吸附,减缓了*CH2=NH的加氢反应。总之,该工作为...
机理研究研究结果验证,光化学产生低价态的镍(异腈)配合物,这些配合物经历C(sp3)-N键的光化学均裂,随后与炔烃发生催化氰化反应。 Jian Qin, Yingying Li, Yuntong Hu, Zhonghou Huang, Weihang Miao, and Lingling Chu*, Photoinduced Nick...
FTIR and Raman spectra show that a large number of the C N covalent bonds have been formed. XRD and Raman analysis indicate that the structure of implanted layer is amorphous. Properties of field emission from C N compound film were also studied. 展开 关键词:...
SEM, FTIR, XPS, XRD, and so on were used to characterize the surface structure, morphology, and chemical composition of iron-based carbon materials. The Cr(VI) adsorption on FCN-x was examined as a function of pH, initial adsorbent concentration, equilibrium time, and adsorbate loadings. ...
Cobalt-Induced C−N and C−C Bond Formation via Metal-Stabilized α-CF3 Carbenium Ion 来自 掌桥科研 喜欢 0 阅读量: 32 作者:H Amouri,JP Bégué,A Chennoufi,D Bonnet-Delpon,B Malézieux 摘要: An α-CF3-carbenium ion stabilized by a bimetallic [Co−Co] cluster was prepared and ...
Moreover, the MWCNTs/CC-SH/Pd heterogeneous nanocatalyst was evaluated using the Buchwald-Hartwig cross coupling reaction, which is a CN bond formation reaction of aryl halides with amines (Scheme 2). First, bromobenzene with morpholine in the existence of MWCNTs/CC-SH/Pd catalyst at 100 °...
When further increasing the Pd loading from 0.02 to 0.5 mg cm−2on Au modified Si electrode, the C-C bond cleavage happened at a much lower potential of 0.2 VRHE(Supplementary Fig.42a), and this characteristic CO peak was found at a wide potential of 0.2-0.9 VRHEdue to the ...
本研究是以射頻磁控濺鍍法,使用燒結碳化矽靶材,在氬氣及氮氣的氣氛下,於矽晶片上沉積Si-C-N三元薄膜.並探討不同的製程參數對薄膜性質的影響.薄膜的特性分析是以電子能譜化學分析技術 (ESCA) 及傅立葉轉換紅外線光譜技術 (FTIR) 分析薄膜的組成及鍵結,原子力顯微技術 (AFM) 觀察薄膜的表面形貌,X射線繞射光譜決...