当再结合拥有氧化物埋层(buried oxide)的SOI晶圆时,集成MEMS将是IC代工工艺的主流。氧化物埋层将可能使MEMS器件从裸 … www.21ic.com|基于20个网页 2. 埋氧层 因此,在通道与基底之间加入了一个埋氧层(Buried Oxide),组成全耗尽绝缘硅(Fully Depleted Silicon OnInsulator,FD-SO… ...
BOX (redirected fromBuried Oxide) AcronymDefinition BOXBuried Oxide BOXBoston Options Exchange(Boston Stock Exchange fully-automated options exchange) BOXBrowsing Objects in XML(Extensible Markup Language) BOXBrothers of Xemption(gaming clan) BOXBinary Optimized XML(Extensible Markup Language) ...
4) shallow oxide 半埋入式氧化物5) buried channel mos 埋沟金属氧化物半导体 例句>> 6) buried or concealed object 埋藏物、隐藏物 例句>> 补充资料:二氧化双环戊二烯玻璃布层合板 分子式:CAS号:性质:以二氧化双环戊二烯为基料充分浸渍玻璃布后叠层,并在加热加压条件下层合而成的板材。相对密度1.73...
1) buried oxide 埋氧 1. Effect of implantation of nitrogen into SIMOX buried oxide on its fixed positive charge density; SIMOX SOI埋氧注氮工艺对埋氧中固定正电荷密度的影响 2. Simulations with a resistive load circuit for power loss comparison at high frequency application are performed with ...
网络隐埋氧化物隔离工艺 网络释义 1. 隐埋氧化物隔离工艺 电器电子专业英语词汇 ... buried oxide 隐埋氧化物buried oxide isolation process隐埋氧化物隔离工艺buried region 隐埋区 ... www.chuandong.com|基于19个网页
Kajiyama K.. BURIED-OXIDE LAYER FORMATION BY HIGH-DOSE OXYGEN ION IMPLANTATION INTO SI WAFERS - SIMOX (SEPARATION BY IMPLANTED OXYGEN)[J].Applied Surface Science: A Journal Devoted to the Properties of Interfaces in Relation to the Synthesis and Behaviour of Materials 1995,1/4(1/4)....
Improved buried oxide (BOX) field isolation in a silicon structure which has a trench with a curved side wall is achieved by employing reactive ion etching or local oxidation of silicon to produce the curved side wall. Electric field enhancement which normally occurs at sharp corners in silicon ...
The buried-oxide charge trapping induced performance degradation was studied in fully-depleted, ultra-thin SOI p-MOSFET's fabricated on SIMOX wafers. The trapped holes were introduced by X-ray irradiation, and the trapped electrons were introduced by hot hole impact ionization. Subthreshold slope and...
1) buried oxide VDMOS 部分埋氧结构纵向扩散金属氧化物半导体2) vertical double diffused mos 垂直双扩散金属氧化物半导体结构 例句>> 3) VMOS 纵向金属氧化物半导体4) HV LDMOS 高压横向扩散金属氧化物半导体5) LDMOS 横向扩散金属氧化物半导体 1. Taking LDMOS RF power amplifier as example,electro-...
The former method produces a reliable buried-oxide layer, but induces a high density of defects in the surface-silicon layer. The latter cuts implantation time and improves surface-silicon crystallinity, but process window is rather narrow. 展开 关键词: Practical, Experimental/ annealing ion ...